Planarization Processes and Applications: II.  B 2 O 3 /  P 2 O 5 Doped GeO2 ‐ SiO2 Glasses

Simpson, Darrell L.; Croswell, Robert T.; Reisman, Arnold; Temple, Dorota; Williams, C. C.

doi:10.1149/1.1392566

Cited by 7 publications

(16 citation statements)

References 4 publications

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“…5 This result is advantageous, as all films for a specific experiment, i.e., for stress measurements, reflow analysis, or solubility studies can be deposited under the same conditions despite compositional variations. 4,5,13 An important factor in this result is that the molar volumes of SiO 2 and GeO 2 are comparable, that is, GeO 2(MV) ϭ 28.8 cm 3 /mol and SiO 2(MV) ϭ 27.5 cm 3 /mol as obtained from bulk values of density and molecular weights. 14 Assuming that the kinetic rate for GeH 4 and SiH 4 decomposition and oxidation appear similar, it is not surprising that the thicknesses under the same process conditions are approximately the same.…”

Section: Undoped Germanosilicate Deposition-(refractive Index and Thi...mentioning

confidence: 79%

“…Wafers were processed for different times to obtain film thicknesses required for different experiments detailed elsewhere. 4,5,13 Times varied from 6 min for 1000 Å films to 1 h for approximately 1 m films. Film thickness and index of refraction were determined by variable angle spectroscopic ellipsometry (VASE).…”

Section: Undoped Germanosilicate Deposition-(refractive Index and Thi...mentioning

confidence: 99%

“…3 Doped GeO 2 -SiO 2 glass films, on the other hand, have been reported as reflowing at temperatures as low as 550ЊC. 4,5 The films offer potential for use as IMDs, or for use in shallow trench isolation (STI) technologies.…”

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confidence: 99%

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Deposition and Characterization of Undoped and Boron and Phosphorus Doped (Si[sub x]Ge[sub 1−x]O[sub 2]) Glass Films

Simpson

Croswell

Reisman

et al. 2000

J. Electrochem. Soc.

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Glass films of undoped and boron and phosphorus doped GeO 2 -SiO 2 glass films were prepared by plasma enhanced chemical vapor deposition using germane, silane, phosphine, diborane, and oxygen as precursor gas sources with argon as a carrier gas. Film synthesis was carried out at 200ЊC using a dual-coil, inductively coupled plasma system. The presence of silane was not necessary to catalyze the decomposition of germane in the plasma environment as required in a strictly thermal environment. The index of refraction of undoped films changes linearly with SiO 2 composition, and deposition rate was nearly constant across all film compositions. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Auger energy spectroscopy. For undoped films, solid-phase SiO 2 composition varied linearly with silane gas-phase composition. For doped compositions, phosphorus mole fraction in the solid phase was up to a factor of two greater than that present in the gas phase. In contrast to this, the quantity of boron incorporated into the solid phase was a factor of five to six less than present in the gas phase. When both dopants were present in the gas phase, the amount of each incorporated into the solid phase was similar to that in the gas phase. Figure 1. PECVD cross-flow deposition apparatus.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.174.255.116 Downloaded on 2015-03-09 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.174.255.116 Downloaded on 2015-03-09 to IP

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Section: Undoped Germanosilicate Deposition-(refractive Index and Thi...mentioning

confidence: 79%

Section: Undoped Germanosilicate Deposition-(refractive Index and Thi...mentioning

confidence: 99%

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Deposition and Characterization of Undoped and Boron and Phosphorus Doped (Si[sub x]Ge[sub 1−x]O[sub 2]) Glass Films

Simpson

Croswell

Reisman

et al. 2000

J. Electrochem. Soc.

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“…Nevertheless, the practical significance of other glass systems is discussed now and again, with emphasis on glass synthesis and possible ways to lower the flow temperature [11,12,51,52]. A great deal of effort is needed in this nascent field of research.…”

Section: Discussionmentioning

confidence: 99%

Borophosphosilicate glass films in silicon microelectronics, part 2: Structure and applications

Vasil'ev

2005

Russ Microelectron

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“…In Parts I 1 and II 2 of this paper, it has been shown that both undoped and boron/phosphorus-doped germanosilicate thin films can be planarized over structures at significantly lower temperatures than other glasses, such as borophosphosilicate glass. However, variations in several film properties based on composition, such as water solubility, electrical leakage, and mechanical stress, must also be addressed.…”

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confidence: 95%

Planarization Processes and Applications III. As-Deposited and Annealed Film Properties

Croswell

Reisman

Simpson

et al. 2000

J. Electrochem. Soc.

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In Parts I 1 and II 2 of this paper, it has been shown that both undoped and boron/phosphorus-doped germanosilicate thin films can be planarized over structures at significantly lower temperatures than other glasses, such as borophosphosilicate glass. However, variations in several film properties based on composition, such as water solubility, electrical leakage, and mechanical stress, must also be addressed. For instance, it is well known that germanium dioxide and germanosilicates rich in germanium oxide are water soluble. 3-6 Germanium dioxide is also reported to have high leakage currents when functioning as an insulator. 7-10 Mechanical stress is also an issue, since the thermal coefficient of expansion (TCE) of GeO 2 is greater than that of silicon, 11,12 while the TCE of SiO 2 is less than that of silicon. 13 Therefore, changes in the germanosilicate composition may have a profound effect on stress, or at least on the extrinsic (thermal expansion) component of stress.This paper examines the water solubility, electrical leakage, breakdown characteristics, and the mechanical stress of both the undoped and boron/phosphorus-doped germanosilicate glasses in both the as-deposited and the argon annealed states. Moreover, these properties are to be examined following the "composition changing" forming gas and steam anneals, as discussed in Parts I and II, to ascertain the benefits or disadvantages incurred by the forming gas, steam, or argon-steam two-step processes. ExperimentalSample preparation.-Germanosilicate films were deposited on single-crystal silicon substrates by the plasma-enhanced chemical vapor deposition (PECVD) method reported elsewhere. 14 Following deposition, reflow experiments were conducted in either argon, steam, forming gas, or a two-step process with argon and either steam or forming gas. These experiments were all conducted at atmospheric pressure. Temperatures for argon treatments ranged from 550 to 1050ЊC. Steam treatments were conducted with stoichiometric combinations of hydrogen and oxygen in a 2:1 ratio as well as with 10% excess oxygen. Excess oxygen was used to consume any excess hydrogen in the steam pyrolysis reaction. Steam treatments were limited to temperatures at and above 750ЊC to ensure complete combustion of the hydrogen/oxygen mixtures. Experiments were actually performed at both 750 and 800ЊC. Forming gas experiments were conducted with 3.4, 8.9, and 9.6% H 2 with the balance being N 2 . Various percentages of hydrogen were used to study the effects of different partial pressures of hydrogen on the films during the anneals. Forming gas reflow experiments were also performed at 750 and 800ЊC for direct comparison with the steam treatment results.Samples for water solubility tests were cleaved into 1 ϫ 1 cm dies prior to thermal treatments. Wafers for electrical testing were left whole in the undoped experiments, but they were cleaved into quarters prior to thermal treatment in the doped experiments. Stress measurement wafers were left intact, as required by the stress me...

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Planarization Processes and Applications: II. B 2 O 3 / P 2 O 5 Doped GeO2 ‐ SiO2 Glasses

Cited by 7 publications

References 4 publications

Deposition and Characterization of Undoped and Boron and Phosphorus Doped (Si[sub x]Ge[sub 1−x]O[sub 2]) Glass Films

Deposition and Characterization of Undoped and Boron and Phosphorus Doped (Si[sub x]Ge[sub 1−x]O[sub 2]) Glass Films

Borophosphosilicate glass films in silicon microelectronics, part 2: Structure and applications

Planarization Processes and Applications III. As-Deposited and Annealed Film Properties

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