Plasma-assisted MBE growth and characterization of InN on sapphire

Особенности спектров фотовозбуждения эпитаксиальных слоев InN, выращенных методом молекулярно-пучковой эпитаксии с плазменной активацией азота

“…• C. Из литературы хорошо известно, что осаждение на начальных этапах зародыше-вого слоя при низкой температуре способствует улуч-шению кристаллического качества пленки InN [13,14]. Рост пленки InN проходил в азотобогащенных условиях при соотношении потоков элементов III и V групп ∼ 0.8, при этом поток индия на подложку составлял ∼ 0.4 мкм/ч.…”

Optical Absorption in Periodic InN:In Structures

“…A deviation of InN band gap value is explained in terms of the Burshtein-Moss effect applied to a non-parabolic band structure [2]. However, a lot of controversial properties of InN can be explained only in assumption that this material is a metal-semiconductor composite [3]. Indium clusters in an InN matrix are spontaneously formed during growth due to several reasons, such as the small heat of formation, the weak N-In bonds, and difficulties in removing In atoms from the surface.…”

“…In such small conductive particles one can observe the resonant light absorption -due to so-called Mie resonances, which arise from the interaction of an incident electromagnetic wave with multipolar excitations of electrons in the clusters. The Mie resonances will modify the complex dielectric function of this material and disguise its true adsorption edge [3,4]. Besides, specific absorption related to the optical transitions between parallel band in the polyvalent metal [5] has to contribute to the optical losses as well.…”

Comment on “Superconductivity in heavily compensated Mg-doped InN” [Appl. Phys. Lett. 94, 142108 (2009)]

“…2 It was reported that metallic In clusters can form spontaneously during epitaxial growth of InN due to its small heat of formation and large density of extended defect which are able to accumulate excessive In from the InN surface. 3,4 The indium itself is a superconducting metal. …”