Polarity tuning of carbon nanotube transistors by chemical doping for printed flexible complementary metal-oxide semiconductor (CMOS)-like inverters

Xiao, Hongshan; Xie, Huafei; Robin, Malo; Zhao, Jianwen; Shao, Lin; Wei, Miaomiao; Portilla, Luis; Pecunia, Vincenzo; Chen, Shujhih; Lee, Chiayu; Mo, Lixin; Cui, Zheng

doi:10.1016/j.carbon.2019.03.003

Cited by 25 publications

(20 citation statements)

References 42 publications

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“…A SAM consisting of C 18 -PA or FC 17 -PA (Figure b) was then solution-deposited on the AlO x surface, ,, resulting in robust AlO x /SAM nanodielectrics: capacitance C ox‑SAM > 0.5 μF/cm 2 (at 1 kHz) and leakage current <1 μA/cm 2 (at 0.5 V) (SI2). An sc-SWCNT ink , was then deposited and patterned by aerosol-jet printing (AJP) to form the semiconducting layer. The ink concentration was fine-tuned empirically by assessing the device performance (Tables S1, S2), so that a suitable sc-SWCNTN (SI20) was deposited in a single printing pass.…”

Section: Resultsmentioning

confidence: 99%

“…e ., with the same/comparable material complexity) that can deliver complementary-like VTCs using a complementary circuit architecture (Table S3). ,,,− ,− ,,− ,− As an added advantage, the undesirable Z-shaped VTC characteristic of ambipolar inverters is appreciably reduced when the inverters are driven in the deep-subthreshold regime (SI17). Finally, experimental inverter characteristics at variable V DD (Figure e) show that functionality ( i .…”

Section: Resultsmentioning

confidence: 99%

“…The sc-SWCNT ink consisting of (16,2) semiconducting carbon nanotubes was synthesized by adding 10 mg of arc discharge carbon nanotubes (Carbon Solution, USA) and 5 mg of PFIID to 20 mL of toluene. 34 The mixture was then subjected to probe ultrasonication for 30 min at 0 °C (Sonics & Materials Inc., VCX 130 60 W, USA), allowing the PFIID polymer to selectively wrap around sc-SWCNT, rendering them highly soluble in toluene. 33 Subsequently, the homogenized mixture was centrifuged at 30000g for 2 h to remove the fractional amount of metallic carbon nanotubes and any other insoluble material.…”

Section: Methodsmentioning

confidence: 99%

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Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics

et al. 2020

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The development of ultralow-power and easy-tofabricate electronics with potential for large-scale circuit integration (i.e., complementary or complementary-like) is an outstanding challenge for emerging off-the-grid applications, e.g., remote sensing, "place-and-forget", and the Internet of Things. Herein we address this challenge through the development of ambipolar transistors relying on solution-processed polymer-sorted semiconducting carbon nanotube networks (sc-SWCNTNs) operating in the deep-subthreshold regime. Application of self-assembled monolayers at the active channel interface enables the fine-tuning of sc-SWCNTN transistors toward well-balanced ambipolar deep-subthreshold characteristics. The significance of these features is assessed by exploring the applicability of such transistors to complementary-like integrated circuits, with respect to which the impact of the subthreshold slope and flatband voltage on voltage and power requirements is studied experimentally and theoretically. As demonstrated with inverter and NAND gates, the ambipolar deepsubthreshold sc-SWCNTN approach enables digital circuits with complementary-like operation and characteristics including wide noise margins and ultralow operational voltages (≤0.5 V), while exhibiting record-low power consumption (≤1 pW/μm). Among thin-film transistor technologies with minimal material complexity, our approach achieves the lowest energy and power dissipation figures reported to date, which are compatible with and highly attractive for emerging off-the-grid applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics

et al. 2020

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“…[555,556] For example, Jang et al fabricated short-channel (150-200 nm) FET using inkjet printing of semiconducting CNTs, [557] which exhibited a mobility value of 24 cm 2 V À1 s À1 at an operation voltage of 0.5 V. The doped CNTs (p type and n type CNTs) have also been used to fabricate CMOS devices. [558,559] Kim et al fabricated ICs using ambipolar and p-type single-walled CNT thin-film transistors. [560] All the patterns, including semiconductors, dielectrics, and conductive interconnects, were inkjet printed.…”

Section: D Inorganic Semiconductorsmentioning

confidence: 99%

Ink‐Based Additive Nanomanufacturing of Functional Materials for Human‐Integrated Smart Wearables

2020

Advanced Intelligent Systems

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Human-integrated devices include wearable and implantable devices for monitoring vital human signals or interacting with the human body. [1-3] The human-integrated devices needed to be tethered to the organs or the human skin for implementing their functions such as sensing and energy harvesting. [4-18] The economical, agile, customizable manufacturing, and integration of multifunctional device modules into networked systems with mechanical compliance and robustness will enable unprecedented human-integrated smart wearables [19-23] and usher in exciting opportunities in emerging technologies such as electronics, [24-29] wearable computation, [30-36] human-machine interface, [37-42] robotics, [43-48] and advanced healthcare. [49-54] The fabrication of stateof-the-art microelectronics involves hightemperature processing steps, which are generally incompatible with the flexible substrates (e.g., paper, polymer, fiber, etc.) [55-61] widely used in the wearable devices. Moreover, the current microfabrication technologies are not well positioned to process the emerging functional nanomaterials (e.g., nanowires [NWs] and 2D materials). [62-65] Such incomparability severely limits the pace of deploying these emerging materials (despite their unprecedented properties) in wearable and flexible device technologies. The additive manufacturing (AM) processes have emerged as potential candidates for addressing the earlier limitations of the current microfabrication technologies in fabricating flexible/wearable printed devices with diversified functionalities, e.g., energy harvesting/storage, sensing, actuation, and computation, leveraging advantages such as maskless processing, versatile ink formulation, low cost, low processing temperature, and scalability. [66-71] Researchers have devoted tremendous efforts to develop the related technologies, and several reviews have provided excellent discussions on the material formulation and process aspects of AM techniques. [63,72-79] However, to our best knowledge, there are few review reports about the ink-based additive nanomanufacturing of functional materials for human-integrated smart wearables. To fill this gap, here we review the recent progress in ink-based

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“…Various channel materials, such as semiconducting single‐walled carbon nanotubes (sc‐SWCNTs), metal oxide, organic semiconductors, nanocrystals, and 2D materials have been demonstrated to construct TFTs by printing or solution‐processable methods. [ 9–13 ] Amongst them, sc‐SWCNTs have been considered as one of the most promising semiconductor materials for printed flexible TFTs owing to their excellent electrical properties, environmental stability, solvability, and high carrier mobility, and have been explored for numerous functional applications in flexible electronics and IoTs, such as logic circuits, [ 14,15 ] sensors, [ 16–18 ] flexible displays, [ 3,19 ] and so on.…”

Section: Introductionmentioning

confidence: 99%

A Universal Method for High‐Efficiency Immobilization of Semiconducting Carbon Nanotubes toward Fully Printed Paper‐Based Electronics

Ren

Wang

et al. 2021

Adv Elect Materials

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Semiconducting single‐walled carbon nanotubes (sc‐SWCNTs) are promising candidates for constructing high‐performance fully printed flexible thin film transistors (TFTs) and circuits. How to achieve highly dense and uniform SWCNT thin films on different substrates has become a key scientific issue for printed flexible carbon‐based electronics. In this work, a universal method to efficiently immobilize conjugated polymer‐sorted sc‐SWCNTs on different substrates using solution‐processable SiO2 thin film as the adhesion layer is developed. Fully printed top‐gate SWCNT TFTs are successfully constructed by combining aerosol jet and inkjet printing using silver electrodes and ionic liquid‐cross‐linkable‐poly(4‐vinylphenol) as metal contact electrodes and dielectrics, respectively. Consequently, the fully printed paper‐based SWCNT TFTs represent extraordinary mechanical flexibility and good electrical properties with high on/off ratio (higher than 105), small subthreshold swing (≈70 mV dec−1), and small hysteresis, as well as high carrier mobility (up to 10.8 cm2 V−1 s−1) at low gate voltages (±1 V). In addition, the resistor‐loaded fully printed paper‐based inverters are also achieved using printed carbon nanotube conductive lines as the loaded resistors, exhibiting relatively large gains (16 at VDD of 1 V) and excellent mechanical flexibility. This work represents an encouraging advancement toward the practical applications of SWCNTs for high‐performance, low‐cost, and eco‐friendly paper‐based electronics.

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Polarity tuning of carbon nanotube transistors by chemical doping for printed flexible complementary metal-oxide semiconductor (CMOS)-like inverters

Cited by 25 publications

References 42 publications

Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics

Ambipolar Deep-Subthreshold Printed-Carbon-Nanotube Transistors for Ultralow-Voltage and Ultralow-Power Electronics

Ink‐Based Additive Nanomanufacturing of Functional Materials for Human‐Integrated Smart Wearables

A Universal Method for High‐Efficiency Immobilization of Semiconducting Carbon Nanotubes toward Fully Printed Paper‐Based Electronics

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