Polycrystalline perovskite CH3NH3PbCl3/amorphous Ga2O3 hybrid structure for high-speed, low-dark current and self-powered UVA photodetector

Liu, Shuo; Jiao, Shujie; Lü, Hongliang; Nie, Yiyin; Gao, Shiyong; Wang, Dongbo; Wang, Jinzhong; Zhao, Liancheng

doi:10.1016/j.jallcom.2021.161827

Cited by 39 publications

(20 citation statements)

References 43 publications

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“…Furthermore, the combination of amorphous/crystalline heterojunction and strict interface treatment significantly reduce the non-radiative recombination of photogenerated carriers, greatly improving the photodetection efficiency. Compared with representatively self-powered Ga 2 O 3 photodetectors in critical parameters of PDCR, R, D * , and decay speed [7], [13], [14], [17], [22], [23], [24], [25], [26], [27], [28], [29], [30], [31], [32], [33], [34], [35], [36], [37], this NiO/Ga 2 O 3 detector exhibits superexcellent comprehensive performance (Figs. 5(a) and (b)).…”

Section: Resultsmentioning

confidence: 99%

Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Ding¹,

Hao²,

Yu³

et al. 2023

IEEE Electron Device Lett.

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Self-powered solar-blind photodetector (SBPD) promises potential applications that urgently need portability and low-power consumption. Herein, an ultrasensitive self-powered p-n heterojunction SBPD based on amorphous NiO and single crystal Ga 2 O 3 has been reliably achieved. The device exhibits a high phototo-dark-current ratio of 3 × 10 6 , ultrahigh responsivity (R) of 5 A/W, and specific detectivity of 1.6 × 10 14 Jones under 254 nm illumination at 0 V, with a solar-blind/visible rejection ratio (R 254 nm /R 460 nm ) of 2 × 10 4 . Notably, the open circuit voltage can reach 1.3 V and the response speed is significantly less than 1 ms. The comprehensive performance of the device exceeds most reported stateof-the-art Ga 2 O 3 self-powered SBPDs, which is mainly attributed to amorphous NiO/crystalline Ga 2 O 3 vertical junction structure with low-defect interface and strong built-in electric field. This work provides novel design strategies for the future development of high-performance self-powered photodetector.

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Section: Resultsmentioning

confidence: 99%

Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Ding¹,

Hao²,

Yu³

et al. 2023

IEEE Electron Device Lett.

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“…have improved responsivity compared to a-Ga 2 O 3 MSM devices and a self-powering effect. However, the self-powered performance, like the responsivity of the device at 0 V bias voltage, is lower. , …”

Section: Introductionmentioning

confidence: 99%

Nanoscale-Thick a-Ga₂O₃ Films on GaN for High-Performance Self-Powered Ultraviolet Photodetectors

Lin,

Su,

Mao

et al. 2023

ACS Appl. Nano Mater.

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A super-high-performance self-powered ultraviolet photodetector constructed on a p-GaN/a-Ga 2 O 3 p-n heterojunction was fabricated by growing nanoscale-thick films of n-type a-Ga 2 O 3 on p-type GaN film using magnetron sputtering at room temperature. This device exhibited a self-powered effect and dual-band UV detection capability. The device showed exceptional photodetection performance with a responsivity of 5.65 A/W, I light /I dark ratio of 2.03 × 10 2 , and a detectivity of 8.46 × 10 12 cm Hz 1/2 W −1 to 254 nm light irradiation and a responsivity of 43.8 A/W, I light /I dark ratio of 1.53 × 10 3 and a detectivity of 6.56 × 10 13 cmHz 1/2 W −1 under 365 nm UV light irradiation of 50 μW/cm 2 light intensity at 0 V, respectively. This outstanding photodetection performance might be ascribed to the distanced separation between photogenerated charge carriers that occurs due to the built-in electric field across the depletion region of the p-n junction of the GaN/a-Ga 2 O 3 thin film. This study shows the GaN/a-Ga 2 O 3 thin-film-based p-n heterojunction UV photodetector with both self-powered performance and dual-band UV photodetection is very promising for practical applications.

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“…Owing to its excellent optical and electronic properties, β-Ga 2 O 3 is a great candidate to fabricate the core of a PD. Great efforts have been made to improve the performance of devices, for example, polymorphous or amorphous Ga 2 O 3 ; ,− exploiting new phase of Ga 2 O 3 ; ,,− formation of heterojunctions to enable the effective separation of electron–hole pairs; ,− n-type doping − to improve responsivity, increase the photo-to-dark current ratio and bandwidth, and reduce the resistance and capacitance of the metal electrode–semiconductor junction for a good electronic contact; and p-type doping to improve the low thermal conductivity of Ga 2 O 3 . However, these devices exhibit slow response speed as the oxygen vacancies defects are ubiquitous. , Herein, the crystal quality and size of Ga 2 O 3 are modified to improve the performance of devices.…”

Section: Introductionmentioning

confidence: 99%

Ga₂O₃@Al₂O₃ Core–Shell Nanowires for High-Performance Solar-Blind Photodetectors

Jiang,

Qiu,

Tao

et al. 2023

ACS Appl. Nano Mater.

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High-performance solar-blind photodetectors (SBPDs) have been indispensable in both military and civilian applications. Herein, Ga2O3@Al2O3 core–shell nanowires (NWs) are synthesized by plasma-enhanced atomic layer deposition (PEALD) Al2O3 layer on the surface of Ga2O3 nanowires. The Ga2O3@Al2O3 NW has a length of tens of micrometers, and the thickness of Ga2O3 and Al2O3 layers in the NW is approximately 30 and 5 nm, respectively. The PEALD method passivates surface defects to improve the crystal quality of Ga2O3. The metal–semiconductor–metal (MSM) Ga2O3@Al2O3 NW-based SBPDs exhibit a superhigh sensitivity of 1.07 × 103 A/W and a high response speed of less than 83 ms at 5 V bias voltage under 254 nm irradiation. Additionally, the Ga2O3@Al2O3 NW PDs exhibit a superhigh specific detectivity of 3.38 × 1011 Jones, an external quantum efficiency (EQE) of 5.22 × 105%, and a high deep ultraviolet (DUV)/visible responsivity rejection ratio (R 254/405) of 4.81 × 102. These results suggest that this method is an effective way to design and prepare high-performance photonic devices.

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Polycrystalline perovskite CH3NH3PbCl3/amorphous Ga2O3 hybrid structure for high-speed, low-dark current and self-powered UVA photodetector

Cited by 39 publications

References 43 publications

Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Nanoscale-Thick a-Ga₂O₃ Films on GaN for High-Performance Self-Powered Ultraviolet Photodetectors

Ga₂O₃@Al₂O₃ Core–Shell Nanowires for High-Performance Solar-Blind Photodetectors

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Polycrystalline perovskite CH3NH3PbCl3/amorphous Ga2O3 hybrid structure for high-speed, low-dark current and self-powered UVA photodetector

Cited by 39 publications

References 43 publications

Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Nanoscale-Thick a-Ga2O3 Films on GaN for High-Performance Self-Powered Ultraviolet Photodetectors

Ga2O3@Al2O3 Core–Shell Nanowires for High-Performance Solar-Blind Photodetectors

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Product

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Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Self-Powered p-NiO/n-Ga₂O₃ Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage

Nanoscale-Thick a-Ga₂O₃ Films on GaN for High-Performance Self-Powered Ultraviolet Photodetectors

Ga₂O₃@Al₂O₃ Core–Shell Nanowires for High-Performance Solar-Blind Photodetectors