Polycrystalline silicon-on-metal strain gauge transducers

Erskine, J.C.

doi:10.1109/t-ed.1983.21212

Cited by 36 publications

(11 citation statements)

References 5 publications

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“…Sensors utilizing the piezoresistive effect include microphones, pressure sensors, force sensors, flow sensors, and displacement sensors [7], [8]. One of the most common techniques for fabricating piezoresistive sensors is to diffuse a resistor onto a silicon diaphragm or cantilever beam that deflects in reaction to an external stimulus [9], [10]. The diffused silicon resistor is put into tension or compression as the diaphragm or cantilever deflects.…”

Section: Introductionmentioning

confidence: 99%

A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads

Johns

Howell²,

Jensen³

et al. 2008

J. Microelectromech. Syst.

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This paper proposes a model for predicting the piezoresistive effect in microflexures experiencing bending stresses. Linear models have long existed for describing piezoresistivity for members in pure tension and compression. However, extensions of linear models to more complex loading conditions do not match with experimental results. A second-order model to predict piezoresistive effects in tension, compression, and more complex loading conditions is proposed. A reduced form of the general second-order model is presented for thin flexures in bending. A three-step approach is used to determine the piezoresistive coefficients for this reduced-form model. The approach is demonstrated for two sets of n-type polysilicon. The predictive ability of the model is investigated by comparing the results to the experimental results using the new piezoresistive model and coefficients. One of the ways to implement the model is with multiphysics finite element analysis (FEA). The piezoresistive FEA for flexures algorithm is a FEA implementation of the unidirectional form of the model for flexures. The results presented in this paper are for the simplified cases of long thin flexures experiencing bending and axial loads. This new model could contribute to optimized sensors and feedback control of microdevices, nanopositioning, and self-sensing microdevices.

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Section: Introductionmentioning

confidence: 99%

A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads

Johns

Howell²,

Jensen³

et al. 2008

J. Microelectromech. Syst.

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show abstract

“…Hydrophone is measured by the voltage that is produced per unit of hydrostatic pressure. If the underwater hydrophone sensing diaphragm is designed in a circular shape with a large initial tensile stress, the mechanical sensitivity [V/Pa] of the underwater microphone can be expressed as [17][18][19]…”

Section: Device Designmentioning

confidence: 99%

Fabrication and Characterization of High-Sensitivity Underwater Acoustic Multimedia Communication Devices with Thick Composite PZT Films

Liu¹,

Cheng²,

Ho³

et al. 2017

Journal of Sensors

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This paper presents a high-sensitivity hydrophone fabricated with a Microelectromechanical Systems (MEMS) process using epitaxial thin films grown on silicon wafers. The evaluated resonant frequency was calculated through finite-element analysis (FEA). The hydrophone was designed, fabricated, and characterized by different measurements performed in a water tank, by using a pulsed sound technique with a sensitivity of −190 dB ± 2 dB for frequencies in the range 50–500 Hz. These results indicate the high-performance miniaturized acoustic devices, which can impact a variety of technological applications.

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“…In the early models proposed (Mikoshiba, 1981;Erskine, 1983;Germer & Tödt, 1983), the contribution of grain boundaries to piezoresistive effect was neglected, thereby resulting in the discrepancy between experimental data and theoretical results at low doping levels. To tackle this issue, Schubert et al took the piezoresistive effect of depletion region barriers (DRBs) arising from carrier trapping at grain boundaries into account and established a theoretical model for calculating gauge factors (Schubert, et al, 1987).…”

Section: Tunneling Piezoresistive Theory 61 Analysis Of Existing Thementioning

confidence: 99%

Polycrystalline Silicon Piezoresistive Nano Thin Film Technology

Liu¹,

Changzhi²,

Chuai³

2010

Solid State Circuits Technologies

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Polycrystalline silicon-on-metal strain gauge transducers

Cited by 36 publications

References 5 publications

A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads

A Model for Predicting the Piezoresistive Effect in Microflexures Experiencing Bending and Tension Loads

Fabrication and Characterization of High-Sensitivity Underwater Acoustic Multimedia Communication Devices with Thick Composite PZT Films

Polycrystalline Silicon Piezoresistive Nano Thin Film Technology

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