Polycrystalline Silicon Piezoresistive Nano Thin Film Technology

Liu, Xiaowei; Changzhi, Shi; Chuai, Rongyan

doi:10.5772/6886

Cited by 6 publications

(4 citation statements)

References 30 publications

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“…[21] However, similar trends in G have been reported in mixed CNT [56,57] and graphene composites, [19] as well as layered CNT [58] and patterned polysilicon composites. [59] This increase in sensitivity with Mf (i.e.…”

Section: Mechanical Characterisation and Electromechanical Responsementioning

confidence: 95%

Surface coatings of silver nanowires lead to effective, high conductivity, high-strain, ultrathin sensors

et al. 2017

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Abstract:Integrated sensors for bodily measurements require a sensing material that are highly conductive, flexible, thin and sensitive. It is important that these materials be non-invasive in application but robust in nature to allow for effective, continuous measurement. Herein, we report a comparative study of two simple, scalable methods to produce silver nanowire (AgNW) polyurethane (PU) composite materials: layer-by-layer (LBL) and mixed filtration.Both types of composites formed were ultrathin (~50 µm) and highly conductive (10 4 S/m), with the LBL method ultimately found to be superior due to its low percolation threshold.Electrical resistance of the LBL composites was found to vary with strain, making these materials suitable for strain sensing. LBL composites displayed a working strain up to ~250% and a high gauge factor (G), with values of G~70 reported. The sensors reported here were ~10 9 -times more conductive and ~10 4 -times thinner than their carbon-based composite sensor counterparts with similar gauge factor. This made the strain sensors presented here among one of the most flexible, highly sensitive, thinnest, conductive materials in literature.We demonstrated that with these properties, the LBL composites formed were ideal for bodily motion detection. Introduction:

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Section: Mechanical Characterisation and Electromechanical Responsementioning

confidence: 95%

Surface coatings of silver nanowires lead to effective, high conductivity, high-strain, ultrathin sensors

et al. 2017

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“…The decrease of the piezoresistance in poly SiC compared to crystalline SiC can be explained by using the model of polycrystalline semiconductors. Accordingly, the diminution of gauge factor could be reasoned by the random alignment of crystal grain inside the poly materials [94], or due to the scattering of carriers at grain boundaries [95], [96].…”

Section: B Piezoresistive Effect In Silicon Carbidementioning

confidence: 99%

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

Phan

Dao

Nakamura

et al. 2015

J. Microelectromech. Syst.

222

148

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“…These defects result in the formation of trapping states which immobilize charge carriers, creating a potential barrier (V b ) 32,33 . Consequentially, the carriers can move through these potential barriers via the tunneling current which is described in the following equation 36,37 :…”

mentioning

confidence: 99%

“…These defects result in the formation of trapping states which immobilize charge carriers, creating a potential barrier (V b ). 32,33 Consequentially, the carriers can move through these potential barriers via the tunneling current which is described in the following equation: 36,37 J f p hh J hh + p lh J lh (6) where p hh and p lh are the concentrations of heavy hole and light hole; and J hh and J lh are tunneling current components of heavy hole and light hole which depend on the potential barrier (f e qV b /kT , where q is the electron charge; V b is the potential barrier; k is the Boltzmann constant; and T is the absolute temperature). Under strain, heavy hole and light hole concentrations change.…”

mentioning

confidence: 99%

The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

et al. 2015

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This paper presents for the first time the effect of strain on the electrical conductance of p-type nanocrystalline SiC grown on a Si substrate. The gauge factor of the p-type nanocrystalline SiC was found to be 14.5 which is one order of magnitude larger than that in most metals. This result indicates that mechanical strain has a significant influence on electrical conduction of p-type nanocrystalline SiC, which is promising for mechanical sensing applications in harsh environments.Silicon carbide (SiC) with its large energy band gap (2.3-3.4 eV) and excellent mechanical properties is a promising material for electrical devices operating in harsh environments 1-3 . Recently, researchers have paid significant attention to the characterization of the strain effect on SiC for sensing applications at high temperatures. Many groups have reported the piezoresistive effect in various poly types of single crystalline SiC such as 3C-SiC, 4H-SiC, and 6H-SiC. Large gauge factors of approximately 30 were reported in both p-type and n-type single crystalline SiC, indicating that SiC is a good candidate for mechanical sensing applications 4-11 . Among more than 200 poly types of crystalline SiC, cubic crystalline silicon carbide (3C-SiC) is preferable for Micro Electro Mechanical Systems (MEMS) transducers. The main advantage of 3C-SiC is the capability of growth on a silicon (Si) substrate, which reduces the cost of wafers and is more compatible with the conventional MEMS process 3,9-12 . Nevertheless, Si is not a suitable material for hostile environment applications due to the current leakage from the epitaxy SiC layer to the Si substrate at high temperatures. Therefore, wafer bonding techniques are required to transfer single 3C-SiC to other electrical insulating substrates, which can withstand high temperatures (e.g silicon dioxide and silicon nitride) 13 . This process indeed increases the cost of wafers as well as complicates the fabrication of SiC devices.Different from single crystalline SiC, nanocrystalline SiC (nc-SiC), with its grain size in sub-micron scale, can be grown on various substrates (e.g. silicon, silicon dioxide, silicon nitride) and therefore, it is a good candidate for MEMS trans- *

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Polycrystalline Silicon Piezoresistive Nano Thin Film Technology

Cited by 6 publications

References 30 publications

Surface coatings of silver nanowires lead to effective, high conductivity, high-strain, ultrathin sensors

Surface coatings of silver nanowires lead to effective, high conductivity, high-strain, ultrathin sensors

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

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