Pore size dependence of PtSi/Porous Si Schottky barrier detectors on quantum efficiency response

Mehrara, Hamed; Khaje, Mahdi; Zahedinejad, Mohammad; Raissi, Farshid; Rezvani, Farshad Hashemi

doi:10.1016/j.sna.2012.06.002

Cited by 12 publications

(7 citation statements)

References 15 publications

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“…Various design schemes have been reported with the objective of improving the performances of photodetectors which include the quality junction formation by metal-insulator-metal [2], metalsemiconductor-metal (MSM) [5,6], tailoring the light reactive area of semiconductor materials [4][5][6][7], and employing the functional materials like nanowires, graphene [1], and silicide [8].…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional nanodome-printed transparent conductors for high-performing Si photodetectors

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Three-dimensional nanodome-printed transparent conductors for high-performing Si photodetectors

et al. 2015

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“…From the past two decades, these junctions have been studied extensively and it is in common usage for 3-5 µm detection spectral range at 77 K [4][5][6][7][8]. Moreover, some attempts have been applied to achieve room temperature operability of PtSi IR detection and improved its range up to 7 µm, using doping spike and porous silicon fix [9][10][11][12][13]. However, a few studies have performed electron transport mechanism in PtSi layer on a porosified substrate.…”

Section: Introductionmentioning

confidence: 99%

Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

Mehrara¹,

Raissi²,

Khaje³

2015

IET Circuits, Devices & Systems

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The authors report on Coulomb blockade effect in the PtSi/porous Si Schottky barrier. A model of two-dimensional multi-tunnelling junction (2D-MTJ) can explain the blockade characteristic of this barrier. Using the SIMON simulator, the electrical characteristics of the proposed model were investigated. The results show that simulated current-voltage curves achieve a reasonable fit with the measured data and the present model can be used to study the PtSi/porous Si Schottky barrier behaviour. In accordance with both the studies, Coulomb blockade phenomenon is observed in current oscillation and single-electron effect of this device at low temperatures (5 K) is justified using the 2D-MTJ model. In addition, it indicates that by increasing the current value with temperature and for high drain voltages, PtSi/porous Si Schottky barrier behaves like a single island single-electron tunnelling (SET) junction as previously reported by Raissi et al.

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“…Another area of interest in detection is in 1-to 3-m wavelength to cover thermal mapping and optical communication application. From fabrication point of view, different methods, such as metal-assisted chemical etching (MaCE), which is compatible with complementary metal-oxide semiconductor (CMOS) process, have attracted scientists' interest in, for example, fabrication of 1-to 3-m wavelength single porousified detector in the recent years (Chartier et al, 2008;Zahedinejad et al, 2011;Mehrara et al, 2012). But producing an array of such detector imposes additional experimental problems in terms of patterning of porous silicon.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, we present the experimental results for fabricating a linear high-density array of PtSi/porous Si Schottky barriers using n-type silicon substrate. Also, we use gold or silver catalysts as mediators to facilitate silicon corrosion and formation of nanostructure with diverse profile from porous to Si nanowires (SiNWs) array, and a room temperature operation of such process guarantees lack of unwanted trap state in silicon band gap due to diffusion of catalysts (Mehrara et al, 2012).…”

Section: Introductionmentioning

confidence: 99%

A room temperature 2 × 128 PtSi/Si-nanostructure photodetector array compatible with CMOS process

2015

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Purpose – The purpose of this paper is to demonstrate a successful fabrication of 2 × 128 linear array of typical infrared (IR) detectors made of p-type tSi/porous Si Schottky barrier. Design/methodology/approach – Using metal-assisted chemical etching (MaCE) as a unique approach, a sample definition of a porous Si nanostructure region for fabricating of any high-density photodetectors array has been formulated. Besides, the uniformity of pixels at different position along the array has been confirmed by optical images and measurements of photocurrent in IR regime at room temperature. Findings – The experimental result illustrates the existence of an open-circuit voltage up to 30 mV at 1.5-μm wavelength for an area of 50 × 50 μm2. Additionally, this behavior is almost the same at different pixels of fabricated array. Research limitations/implications – The uniformity of pixels and definition of nanostructure region are two most important challenges in fabrication of any high-density photodetectors array. Practical implications – MaCE guarantees formation of reproducible, high-fidelity and controllable nanometer-size porous Si with well-defined and sharp edges of the patterned areas. Originality/value – The proposed method offers a low-cost and simple process to fabricate high-density arrays of Schottky detectors which are compatible with the complementary metal-oxide semiconductor process.

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Pore size dependence of PtSi/Porous Si Schottky barrier detectors on quantum efficiency response

Cited by 12 publications

References 15 publications

Three-dimensional nanodome-printed transparent conductors for high-performing Si photodetectors

Three-dimensional nanodome-printed transparent conductors for high-performing Si photodetectors

Coulomb blockade in PtSi/porous Si Schottky barrier as a two‐dimensional multi‐tunnelling junction

A room temperature 2 × 128 PtSi/Si-nanostructure photodetector array compatible with CMOS process

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