Post-complementary metal-oxide-semiconductor vertical and molecular transistors: A platform for molecular electronics

Mentovich, Elad; Richter, Shachar

doi:10.1063/1.3612913

Cited by 3 publications

(4 citation statements)

References 25 publications

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“…This transistor, ,, exhibits low operating voltages, ambipolar behavior, and high gate sensitivity, and it has been successfully used to investigate several systems such as molecular quantum dots and proteins. , …”

Section: Methodsmentioning

confidence: 99%

“…This transistor, 32,39,40 exhibits low operating voltages, ambipolar behavior, and high gate sensitivity, and it has been successfully used to investigate several systems such as molecular quantum dots and proteins. 40,41 Using this transistor configuration, we have previously demonstrated, using various types of MJs rectification or NDR. In the latter case a correlation between NDR appearance and the presence of the redox center was shown.…”

Section: Introductionmentioning

confidence: 99%

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Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor

Mentovich¹,

Rosenberg-Shraga²,

Kalifa³

et al. 2013

J. Phys. Chem. C

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A vertical gate symmetrical molecular transistor is demonstrated. It includes self-assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I−V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in a simple theoretical model that explains our experimental results quite well. Our device design affords a new way to fine-tune the rectification of molecular devices in a way that does not necessarily involve the Coulomb charging of the wire.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor

Mentovich¹,

Rosenberg-Shraga²,

Kalifa³

et al. 2013

J. Phys. Chem. C

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“…We and others have demonstrated this type of device (Figure 1e) [7,[9][10][11][18][19][20][21][22][23] . the same methodology can be adopted (Figure 1a middle), or alternatively, the S, D and the G electrodes can be oriented by an angle (commonly, the electrical current is perpendicular to the molecular skeleton, Figure 1a right).…”

Section: Mt: Motivation and Technological Challengesmentioning

confidence: 99%

“…We have demonstrated vertical central-and side-gate MTs (Figure 4) [7][8][9]11,[21][22][23] . In short, the MTs were designed and fabricated such that channel length, L, is determined solely by the SAM deposited between the source and drain electrodes; this allowed us to make L in the order of nanometers without the need to employ sophisticated lithography techniques.…”

Section: Focus On Vertical Molecular Transistorsmentioning

confidence: 99%

Realization of Molecular‐Based Transistors

2018

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Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest as they allow new modes of operation. The properties of molecular transistors composed of a single- or multimolecule assemblies, focusing on their practicality as real-world devices, concerning industry demands and its roadmap are compared. Also, the capability of the gate electrode to modulate the molecular transistor characteristics efficiently is addressed, showing that electrical gating can be easily facilitated in single molecular transistors and that gating of transistor composed of molecular assemblies is possible if the device is formed vertically. It is concluded that while the single-molecular transistor exhibits better performance on the lab-scale, its realization faces signifacant challenges when compared to those faced by transistors composed of a multimolecule assembly.

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