Practical approach to control the full-chip-level gate CD in DUV lithography

Park, Chul‐Hong; Kim, Yoo-Hyon; Lee, Hoong-Joo; Kong, Jeong-Taek; Lee, Sanghoon

doi:10.1117/12.310751

Cited by 5 publications

(3 citation statements)

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“…The second component is due to etch and resist processes. Optical Proximity Correction (OPC) and attenuated PSM help fix subwavelength distortions to enable better control of critical dimensions (CD), and became an integral part of the lithography process [2]. With the advance in process node, these methods will soon reach their limit.…”

Section: Introductionmentioning

confidence: 99%

A New Approach to Abstracting AltPSM Lithography Requirements for IC Design Domains

Ghosh¹

2005

Analog Integr Circ Sig Process

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This paper lays the groundwork for defining the components needed to get clean alternating phaseshifting masks (altPSM) that ensure the manufacturability of subwavelength circuit designs. The authors create an abstract set of rules that can be used to advantage in various IC CAD tool domains. A new methodology and algorithm are presented that can quickly and easily integrate altPSM into existing and future tools earlier in the IC design flow. Finally, experimental results show how the methodology and algorithm is used to debug process-aware designs and make them altPSM-compliant.

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Section: Introductionmentioning

confidence: 99%

A New Approach to Abstracting AltPSM Lithography Requirements for IC Design Domains

Ghosh¹

2005

Analog Integr Circ Sig Process

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“…One component of the proximity effect is optical interaction among neighboring feature images; other components arise from similar mechanisms in the resist and etch processes. To maintain control of feature dimensions OPC emerged as a necessary component of the lithography process [1] [2]. OPC captures the repeatable variations observed in a lithography process and modifies the mask layout design to counteract predicted distortions (see Figure 1).…”

Section: Introductionmentioning

confidence: 99%

Layout design methodolgies for sub-wavelength manufacturing

Rieger¹,

Mayhew²,

Panchapakesan³

2001

Proceedings of the 38th Conference on Design Automation - DAC '01

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In this paper, we describe new types of layout design constraints needed to effectively leverage advanced optical wafer lithography techniques. Most of these constraints are dictated by the physics of advanced lithography processes, while other constraints are imposed by new photomask techniques. Among the methods discussed are 1) phase shift mask (PSM) lithography in which phase information is placed on the photomask in combination with conventional clear and dark information; 2) optical proximity correction (OPC) where predictable distortions in feature geometry are corrected by putting an inverse distortion on the mask; 3) off-axis illumination optics that improve resolution of some configurations at the expense of others; and 4) use of non-resolving assist features that improve neighboring structures.

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“…Optical Proximity Correction (OPC) and attenuated PSM help correct subwavelength distortions for control of critical dimensions (CD), and have become an integral part of the lithography process [2]. With advances in the process node, these traditional methods may soon reach their limit.…”

Section: Introductionmentioning

confidence: 99%