This study presents the design and development of surface electrode ion traps on glass and Si substrate, as well as their RF characterizations and performance benchmarking. In this case, ion-trap on-glass shows superior performances in all necessary criteria. In terms of RF characterizations, ion-traps on glass have Q factor of greater than 900. This is significantly higher than the Q factor of its silicon counterparts, which are around 20 -300. Such a high Q factor results in power spectral density (PSD) of greater than 10W/MHz. On the other hand, iontraps on-silicon produce PSD values of lower than 3W/MHz. In terms of RF performance, ion-trap on-glass shows insertion loss lower than 0.2 dB at 60MHz. This is more superior to insertion loss values of ion-traps on-silicon, which are around 1 -4 dB. The ion-traps metallization is developed using three metallization layers (0.1µm Ti barrier layer, 2.5 -3.7µm Cu, and 0.3µm Au) on top of dielectric. The on-chip resonance condition can be maintained upon the packaging integration. The laser optical setup for ion-trapping is verified to capture single 88 Sr + ion.