2011
DOI: 10.1016/j.jnoncrysol.2011.03.009
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Preparation and characterization of p-type hydrogenated amorphous silicon oxide film and its application to solar cell

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Cited by 29 publications
(9 citation statements)
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“…The best conductivity was indeed obtained at a 20 W plasma power and was 3.38 Â 10 À2 S cm À1 , while the crystalline volume fraction was 45.81%, optical gap was 1.869 eV and the activation energy was lowest at 102 meV. It is expected that this film will be a better alternative to the p-type amorphous silicon oxide window layer, as used in the reference [4]. Fig.…”
Section: Power Variationmentioning
confidence: 82%
“…The best conductivity was indeed obtained at a 20 W plasma power and was 3.38 Â 10 À2 S cm À1 , while the crystalline volume fraction was 45.81%, optical gap was 1.869 eV and the activation energy was lowest at 102 meV. It is expected that this film will be a better alternative to the p-type amorphous silicon oxide window layer, as used in the reference [4]. Fig.…”
Section: Power Variationmentioning
confidence: 82%
“…Here, oxygen binding in TiO 2 becomes weakened, and oxygen was desorbed from the TiO 2 [34]. This liberated oxygen was likely to be incorporated in the p-a-SiO x :H layer during plasma deposition, which could deteriorate the optimized boron-doping level of the p-layer and increase activation energy [35]. Accordingly, built-in potential and thus the V oc would be reduced.…”
Section: Resultsmentioning
confidence: 99%
“…For high performance, the p-layer of the solar cell should have a high optical bandgap to minimize optical absorption, high dark conductivity and photoconductivity to reduce series resistance, low activation energy to obtain higher open circuit voltage (V oc ), and a narrow valence band tail in order to obtain higher short circuit current density (J sc ). As the wide optical gap window layer ensures less light lost in absorption at the p-layer, higher J sc can be achieved [1].…”
Section: Introductionmentioning
confidence: 99%
“…In contrast, p-type a-SiO x :H films have a lower defect density, Urbach energy and comparatively high doping efficiency [2]. Therefore, the p-type a-SiO x :H films provide a wide bandgap and higher photoconductivity compared to other wide bandgap hydrogenated amorphous silicon materials, which could be useful as a window layer for the solar cells [1,[3][4].…”
Section: Introductionmentioning
confidence: 99%