Preparation of p-type Na-doped Cu₂O by electrodeposition for a p-n homojunction thin film solar cell

Abstract

In this work, a method of enhancing the electrical properties of the electrodeposited p-type Cu 2 O film is described. Sodium doped Cu 2 O was achieved by adding sodium aluminate complex solution to the electrodeposition alkaline Cu (II) lactate electrolyte. The optimal Na content [Na at% atomic ratio] incorporated in the Cu 2 O film was found to be approximately 1.34 at.%. The XPS result shows that the binding energy at 1072.4±0.2 eV corresponds to the presence of sodium in sodium oxide. The optimized resistivity and the hole concentration were approximately 291 Ω cm and 2.13×10 18 cm 3 , respectively. A Cu 2 O p-n homojunction solar cell with 2.05% efficiency was fabricated using a Cl-doped n-type Cu 2 O film and an optimized Na-doped Cu 2 O film.

First principle investigation of hydrogen behavior in M doped Cu2O (M = Na, Li and Ti)

“…The doping of Cu 2 O by Na does not change the nature of his conductivity; the calculated energy of the gap is 0.35 eV. Elfadill et al [47] showed that Na doping Cu 2 O is a p-type characteristic, which shows that our calculations are in good agreement with experimental data. In addition, Minami et al used Cu 2 O doped Na as p-type in p-n heterojunction and/or homojunction solar cells [48,49].…”

Vertically aligned Co3O4 nanorods as a platform for inverted all‐oxide heterojunctions

“…[ 28 ] Rather, instability issues and challenges of fabricating doped Cu 2 O absorber layers are considered as some major drawbacks of employing this material as prospect layer in all‐oxide heterojunction PVs. [ 29 ]…”

“…[28] Rather, instability issues and challenges of fabricating doped Cu 2 O absorber layers are considered as some major drawbacks of employing this material as prospect layer in all-oxide heterojunction PVs. [29] Unlike commonly investigated p-on-n architectures (ntype being the front illuminated contact) of MOx PVs, the inverted structures (n-on-p) of these systems remained unattainable due to technical obstacles for synthesizing a MOx p-type layer, which can enable efficient light absorption in a relatively thin thickness, and at the same time delivers enhanced photocurrent. However, a quintessential inverted structure of MOx heterojunction, with p-type illumination window can enable generation of more acceptors and consequently result in higher carrier separation at the p-n junction interface (Figure 1B).…”

Electrodeposited Cu2O doped with Cl: Electrical and optical properties

“…1,2 The resistivity of this semiconductor, when prepared by electrodeposition, can vary in the range of 10 1 to 10 11 X cm depending on the deposition parameters and incorporation of dopants. [3][4][5][6][7][8] Cu 2 O is a relevant material for several applications such as photocatalysis 9 and solar cells (see Refs. 10 and 11, and therein), and it is very important to develop doping processes to reduce the resistivity and control the n and p character of the material.…”