Printed thin film transistors with 108 on/off ratios and photoelectrical synergistic characteristics using isoindigo-based polymers-enriched (9,8) carbon nanotubes

Xu, Wenjing; Li, Min; Tange, Masayoshi; Li, Liqiang; Hou, Juncai; Ye, Jun; Wei, Li; Chen, Yuan; Zhao, Jianwen

doi:10.1007/s12274-022-4246-1

Cited by 10 publications

(4 citation statements)

References 53 publications

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“…[ 12–17 ] In addition, sc‐SWCNTs can be effectively and simply enriched to form functional ink with high‐purity and good printability by conjugated organic compound wrapping, which is important for making high‐performance and multi‐functional sc‐SWCNT TFT devices. [ 18–25 ]…”

Section: Introductionmentioning

confidence: 99%

“…[12][13][14][15][16][17] In addition, sc-SWCNTs can be effectively and simply enriched to form functional ink with high-purity and good printability by conjugated organic compound wrapping, which is important for making high-performance and multi-functional sc-SWCNT TFT devices. [18][19][20][21][22][23][24][25] However, the polymer-sorted SWCNT transistors always present depletion-mode (D-mode, positive turn-on voltage for P-type) electrical behavior due to the interface-trapped state and P-type doping effect induced mainly by polymer residues and aerial oxygen/moisture adsorption, which is one of the challenges for building ultralow-power ICs. [26,27] Currently, there are some related reports on developing enhancementmode SWCNT transistors (E-mode, turn-on voltage of 0 V for P-type) by depositing encapsulation layers on resulting transistor devices and utilizing low work function metals as gate electrodes (e.g., active metal of Ti, Al, and Y produced at protective atmosphere).…”

Section: Introductionmentioning

confidence: 99%

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Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI₃‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics

Fang

Shao

et al. 2023

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The threshold voltage (Vth) adjustment of complementary metal‐oxide‐semiconductor (CMOS) thin film transistors (TFTs) is one of the research hotspots due to its key role in energy consumption control of CMOS circuits. Here, ultralow‐power flexible CMOS circuits based on well‐matched enhancement‐mode (E‐mode) CMOS single‐walled carbon nanotube (SWCNT) TFTs are successfully achieved through tuning the work function of gate electrodes, electron doping, and printing techniques. E‐mode P‐type CMOS SWCNT TFTs with the full‐solution procedure are first obtained through decreasing the work function of Ag gate electrodes directly caused by the deposition of bismuth iodide (BiI3)‐doped solid‐state electrolyte dielectrics. After synthetic optimization of dielectric compositions and semiconductor printing process, the flexible printed E‐mode SWCNT TFTs show the high Ion/Ioff ratios of ≈106, small subthreshold swing (SS) of 70–85 mV dec−1, low operating voltages of ≈0.5 to −1.5 V, good stability and excellent mechanical flexibility during 10 000 bending cycles. E‐mode N‐type SWCNT TFTs are then selectively achieved via printing the polarity conversion ink (2‐Amino‐2‐methyl‐1‐propanol (AMP) as electron doping agent) in P‐ type TFT channels. Last, printed SWCNT CMOS inverters are successfully constructed with full rail‐to‐rail output characteristics and the record unit static power consumption of 6.75 fW µm−1 at VDD of 0.2 V.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI₃‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics

Fang

Shao

et al. 2023

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“…12 Solutionprocessable semiconductor materials in the forms of organic compounds, 3,[13][14][15][16] graphene, [17][18][19][20][21][22] carbon nanotubes, and oxides 23,24 have been developed to be compatible with current printing techniques. [25][26][27][28][29][30][31] Among them, semiconducting single-walled carbon nanotubes (sc-SWCNTs) are a promising candidate for high-performance flexible printed electronics due to their high carrier mobility, excellent chemical stability, mechanical stability, and compatibility with solution-based printing processes. Printed TFTs based on sc-SWCNTs have attracted much attention in the past few decades and have proven to be the fundamental components of [32][33][34] logic circuits, sensors, 29,[35][36][37][38] and displays.…”

Section: Introductionmentioning

confidence: 99%

Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

Chen

et al. 2023

Nanoscale

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“…Single-chirality SWCNTs have exact diameters, chiral angles, and energy levels, which render them uniquely advantageous for applications in thin-film transistors (TFT), photodetectors, bio-imaging, next-generation computing, and so on. − CPE is proven to be an effective way to enrich single-chirality SWCNTs from various carbon nanotube sources. In addition, the characteristics of the conjugated polymer including the backbone structure, side-chain length, and molecular weight are also critical toward chiral selectivity.…”

Section: Introductionmentioning

confidence: 99%

Impact of Conjugated Polymer Characteristics on the Enrichment of Single-Chirality Single-Walled Carbon Nanotubes

Ouyang

Shin

Finnie

et al. 2022

ACS Appl. Polym. Mater.

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Polymer characteristics influence the chiral selectivity and yield in the enrichment of (7,6) from Signis SG76 in toluene by various fluorene homopolymers and copolymers. Fluorene homopolymers such as poly(9,9-di-n-dodecylfluorene) (PFDD) and copolymers with anthracene such as poly[(9,9dihexylfluorenyl-2,7-diyl)-co-(9,10-anthracene)] (PFH-A) result in high (7,6) selectivities of up to 67 and 72%, respectively. The selectivity is calculated by optical absorption using a known extinction coefficient and also evaluated by Raman scattering and photoluminescence excitation. In contrast, poly[(9,9-dioctyl-2,7divinylenefluorenylene)-alt-co-(9,10-anthracene)] (PFO=A), with a double-bond spacer, results in (9,5) dominant extractions with the purity of (9,5) up to 80% after ultracentrifugation, which is believed to be the first report on the successful enrichment of (9,5) by conjugated polymers. The chiral selectivity is also greatly impacted by the length of alkyl side chain of fluorene homopolymers: hexyl group has low selectivity, while octyl, dodecyl, and tetradecyl (PFTD) groups show high selectivity toward (7,6), and the octadecyl group is prone to include bigger tubes. Interestingly, a chiral selection transition from (7,6) to (8,6) occurred using PFTD after a few enrichment cycles. The chiral purity of (8,6) was greatly improved from 50 to 86% after slow filtration. Polymer molecular weight (MW, here PFDD) also plays a role in the selectivity and yield. Low MW leads to a low yield, and high MW leads to a low selectivity, with the optimal range (M n ) being ca. 20−35 kDa when the polydisperse index is ca. 2−3. Molecular dynamics simulation confirms that different lengths of side chain of polyfluorene have different wrapping stabilities toward specific chirality, where PFTD shows greater stability toward (8,6) than (7,6).

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Printed thin film transistors with 108 on/off ratios and photoelectrical synergistic characteristics using isoindigo-based polymers-enriched (9,8) carbon nanotubes

Cited by 10 publications

References 53 publications

Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI₃‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics

Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI₃‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics

Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

Impact of Conjugated Polymer Characteristics on the Enrichment of Single-Chirality Single-Walled Carbon Nanotubes

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Printed thin film transistors with 108 on/off ratios and photoelectrical synergistic characteristics using isoindigo-based polymers-enriched (9,8) carbon nanotubes

Cited by 10 publications

References 53 publications

Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics

Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics

Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

Impact of Conjugated Polymer Characteristics on the Enrichment of Single-Chirality Single-Walled Carbon Nanotubes

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Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI₃‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics

Fully‐Solution‐Processed Enhancement‐Mode Complementary Metal‐Oxide‐Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI₃‐Doped Crosslinked Poly(4‐Vinylphenol) Dielectrics for Ultralow‐Power Flexible Electronics