Process integration of a 27nm, 16Gb Cu ReRAM

Zahurak, J.; Miyata, Koji; Fischer, Mark H.; Balakrishnan, M.; Chhajed, Sameer; Wells, David; Li, Hong; Torsi, Alessandro; Lim, Jay P.; Korber, Mark; Nakazawa, Keiichi; Mayuzumi, S.; Honda, Motonari; Sills, Scott; Yasuda, Shuichiro; Calderoni, A.; Cook, Beth; Damarla, Gowri; Tran, Hai; Wang, Bei; Cardon, Chris; Karda, Kamal; Okuno, Junko; Johnson, A. Peter; Kunihiro, Takafumi; Sumino, Jun; Tsukamoto, Masanori; Aratani, Katsuhisa; Ramaswamy, Nirmal; Otsuka, Wataru; Prall, Kirk

doi:10.1109/iedm.2014.7046994

Cited by 51 publications

(42 citation statements)

References 4 publications

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“…volatile switching. [22][23][24] But, it has been also demonstrated that stable resistance states can be obtained at about 100 kΩ, 4,16 which is higher than the single atomic contact resistance of 12.9 kΩ. By applying a negative voltage the filament is dissolved.…”

Section: Introductionmentioning

confidence: 95%

“…In this case a transistor in series to the ECM cell (1T1R configuration) can be used to effectively control the maximum current. 4,16 It has been reported in literature that the filament is unstable when no galvanic contact is established and the LRS can already be lost while sweeping the voltage to 0 V due to non-equilibrium states, i.e. volatile switching.…”

Section: Introductionmentioning

confidence: 98%

“…1,2 Recently, a 16 GB memory test chip based on ECM cell has been demonstrated. 3,4 The digital information in ECM cells is encoded as different resistance states, which can be programmed by applying appropriate electrical stimuli. Thereby, the switching from a high resistive state (HRS) to a low resistive state (LRS) is called SET operation.…”

Section: Introductionmentioning

confidence: 99%

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Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

2015

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We report on a 2D kinetic Monte Carlo model that describes the resistive switching in electrochemical metallization cells. To simulate the switching process, we consider several different processes on the atomic scale: electron-transfer reactions at the boundaries, ion migration, adsorption/desorption from/to interfaces, surface diffusion and nucleation. These processes result in a growth/dissolution of a metallic filament within an insulating matrix. In addition, the model includes electron tunneling between the growing filament and the counter electrode, which allows for simulating multilevel switching. It is shown that the simulation model can reproduce the reported switching kinetics, switching variability and multilevel capabilities of ECM devices. As a major result, the influence of mechanical stress working on the host matrix due to the filamentary growth is investigated. It is demonstrated that the size and shape of the filament depend on the Young's modulus of the insulating matrix. For high values a wire-like structure evolves, whereas the shape is dendritic if the Young's modulus is negligible.

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

2015

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“…Here two cells share the bottom electrode to increase density. By exploiting a combination of all the aforementioned solutions Zahurak et al [53] introduces a 16 Gb Cu-based CBRAM array integrated in 27 nm technology. The latter shows 900 MB/s read speed and 180 MB/s for write.…”

Section: Device Optimizationmentioning

confidence: 99%

“…Finally a more complex solution is provided by the redesign of original DRAM architectures. For example using a standard DRAM array technology a 6F 2 CBRAM array has been proposed where a modified buried recessed access device (BRAD) is used for accessing the devices [53]. Here two cells share the bottom electrode to increase density.…”

Section: Device Optimizationmentioning

confidence: 99%

Filamentary-Based Resistive Switching

Celano

2016

Metrology and Physical Mechanisms in New Generation Ionic Devices

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Electrochemical processes and device improvement in conductive bridge RAM cells

Goux

Valov

2015

Physica Status Solidi (a)

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In this paper, we discuss the recent progress on the fundamental understandings of ECM/CBRAM cells but also on the improved device structures and reliability for high‐density applications. The influences of the local chemical environment and the material selection/combination are highlighted, and the filament dynamics is described in a general framework that relates all the reported switching modes. Furthermore we also detail some correlation evidences between the filament shape and device electrical characteristics. Finally, we discuss technological challenges related to current‐scaling and cell size‐scaling. Large switching variability associated to low current needs to be mitigated by appropriate Write‐verify methods, while cell scaling requires novel processing techniques such as Cu dry‐etch.

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Process integration of a 27nm, 16Gb Cu ReRAM

Cited by 51 publications

References 4 publications

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Filamentary-Based Resistive Switching

Electrochemical processes and device improvement in conductive bridge RAM cells

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