Progress toward high-efficiency (>24%) and low-cost multi-junction solar cell production

Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs

“…In order to achieve high efficiency solar cells, one strategy is the utilization of a multi-junction structure [1][2][3]. Unfortunately, one important factor limiting the efficiency of III-V/Ge multi-junction solar cells is the current mismatch among cells, especially the low current density in the GaAs middle junction [4].…”

Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring

“…Recently, in order to overcome the current mismatch among the subcells of III-V/Ge multijunction solar cells 1,2) that has been an important factor limiting the cell efficiency, 3) an InGaAs/GaAsP superlattice (SL) structure has been used in the GaAs middle cell to extend the absorption edge and hence achieve a better current balance and a higher performance. 4,5) However, for the SL structure, achieving a precise strain-balanced condition and a good crystal quality is not straightforward.…”