Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition

Grudowski, P. A.; Eiting, C. J.; Park, J.; Shelton, B. S.; Lambert, Damien; Dupuis, R. D.

doi:10.1063/1.119959

Cited by 36 publications

(13 citation statements)

References 11 publications

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“…It has been suggested in the literature that phase separation and/or In concentration fluctuations is taking place within the InGaN layers and formation of "quantum-dot like areas" has been suggested. [4][5][6][7][8][9] Our x-ray studies showed that sub-layers with different lattice parameters and therefore, different strain and different In content are formed.…”

Section: Tem Resultsmentioning

confidence: 99%

“…4,6 This non-uniformity in InGaN quantum wells is thought to lead to a broadening in the spontaneous emission spectra. 7,8 Moreover, it was shown that spontaneous and gain photoluminescence spectra and Double-crystal and triple-axis x-ray diffractometry and transmission electron microscopy are used to characterize the microstructure, strain, and composition of InGaN layers grown on GaN by metalorganic chemical vapor deposition (MOCVD). Three different samples with increasing In concentration have been studied, all grown on GaN deposited on sapphire either with GaN or AlN buffer layers.…”

Section: Introductionmentioning

confidence: 99%

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Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Liliental-Webber

Benamara

Washburn

et al. 2001

Journal of Elec Materi

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Section: Tem Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Liliental-Webber

Benamara

Washburn

et al. 2001

Journal of Elec Materi

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“…Experimentally, it has been established for both GaN/InGaN [4][5][6][7][8][9][10][11] and AlGaN/ GaN [12][13][14] heterostructures that doping of the active region produces a strong modification of the optical properties, namely: (i) a blue-shift of the photoluminescence (PL) peak, (ii) an enhancement of the emission intensity, (iii) a reduction of the laser threshold current, (iv) a reduction of the carrier radiative recombination lifetime, and (v) a reduction of the Stokes shift between PL peak and the photoluminescence excitation (PLE) spectra. On the other hand, free carrier screening of the polarization field has been investigated experimentally in Ref.…”

Section: Introductionmentioning

confidence: 99%

Tuning Optical Properties of GaN-Based Nanostructures by Charge Screening

Carlo

2001

phys. stat. sol. (a)

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In this paper we will show the influence of doping and free charge screening of polarization fields on the optical and electronic properties of GaN-based nanostructures. Modulation-doped nanostructures can be used to enhance the oscillator strength of the fundamental transition energy. The free charge and doping are shown to be an additional degree of freedom for GaN-based device design.1. Introduction Nitride-based nanostructures are nowadays used in both electronic and optoelectronic devices. In the first case, the large energy gap of GaN-related semiconductors allows for the building of high power devices with high breakdown voltages and high thermal conductivity. In the optoelectronic context, nitride materials are employed in blue emitters (LED and lasers) and in photodetection. The design of such structures is, however, complicated by the presence of internal polarization field, which induces a high junction field when a heterojunction between different nitride semiconductors is formed. The polarization field is the sum of piezoelectric polarization and spontaneous polarization [1]. There are several macroscopic manifestations of the polarization field; among them, the large Stark shift of the fundamental optical transition and the reduction of the oscillator strength of the fundamental optical transition for large wells are very crucial in any optical application of nitride materials.In the case of nitride-based heterojuntion devices, fix (doping) and free charges should be considered in the determination of the real electric field in the heterostructure. In fact, for the case of doping, the polarization field can ionize the donor (or acceptor) thus producing opposite charge that screens (partially) the bare polarization field [2]. The same screening of the polarization field arises when free charges (electrons and holes) are injected into the heterostructure. These charges form a dipole counterbalancing the polarization field [3].We should point out that fix and free charges can be tailored by a proper choice of growth condition, for the doping, and by selecting a proper operation point (such as bias, current, optical pumping etc.) for the free charge. Thus, optical and electronic properties of nitride-based nanostructures can be tuned by using two new degrees of freedom: doping and free charges.Experimentally, it has been established for both and AlGaN/ GaN [12][13][14] heterostructures that doping of the active region produces a strong modification of the optical properties, namely: (i) a blue-shift of the photoluminescence (PL) peak, (ii) an enhancement of the emission intensity, (iii) a reduction of the laser

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“…Detailed knowledge of the effects of Si doping on the optical properties of these materials is crucial, especially for designing practical devices. Recently, the effects of Si doping on the optical properties of GaN epilayers [7,8], InGaN/GaN QWs [9][10][11], and GaN/AlGaN QWs [12,13] have been reported. However, the influence of Si doping on both optical properties and structural qualities in InGaN/GaN multiple quantum well (MQW) device structures is presently not well understood.…”

Section: Introductionmentioning

confidence: 99%

Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells

Cho

Schmidt

Bidnyk

et al. 1999

MRS Internet j. nitride semicond. res.

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We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-µm-thick GaN layers on c-plane sapphire films by metalorganic chemical vapor deposition. The structures consisted of 12 MQWs with 3-nm-thick InGaN wells, 4.5-nm-thick GaN barriers, and a 0

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Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition

Cited by 36 publications

References 11 publications

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Tuning Optical Properties of GaN-Based Nanostructures by Charge Screening

Influence of Si-Doping on Carrier Localization of Mocvd-grown InGaN/GaN Multiple Quantum Wells

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