2004
DOI: 10.1016/j.snb.2003.12.052
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Properties of metal doped tungsten oxide thin films for NOx gas sensors grown by PLD method combined with sputtering process

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Cited by 90 publications
(43 citation statements)
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“…Specifically, two major strategies have been used to improve sensor performance: i) WO 3 in combination with catalytic metals [8][9][10] and ii) metal-oxide composite formulations with the use of a metal-oxide cocatalyst [11][12][13][14]. The present work reports the latter as the experimental strategy to enhance the sensing profile of WO 3 , specifically using novel (CuWO 4 ) thin-films.…”
Section: Introductionmentioning
confidence: 96%
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“…Specifically, two major strategies have been used to improve sensor performance: i) WO 3 in combination with catalytic metals [8][9][10] and ii) metal-oxide composite formulations with the use of a metal-oxide cocatalyst [11][12][13][14]. The present work reports the latter as the experimental strategy to enhance the sensing profile of WO 3 , specifically using novel (CuWO 4 ) thin-films.…”
Section: Introductionmentioning
confidence: 96%
“…Previous studies have shown that WO 3 is a material highly suited for the real-time monitoring of gas-phase pollutants (conductometric sensing phase), particularly for NO x monitoring [6][7][8][9][10][11][12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…We also have been studied thin film preparation using plasma processing technique include hard coating, such as TiN, TiC, WC, cBN, CN, etc. [12][13][14][15]. In order to improve the properties of the super hard material surface on the long cylinder rod, carbon thin films including DLC were prepared on the carbide steel cylinder rod by new magnetron sputtering deposition method using modulated magnetic …”
Section: Introductionmentioning
confidence: 99%
“…Tungsten oxide is one of the most extensively studied materials in the field of photocatalysis, as the working electrode in electrochromic devices and gas sensors [1][2][3][4][5][6]. In the bulk, pure tungsten oxide has an indirect band gap of 2.6 eV.…”
Section: Introductionmentioning
confidence: 99%