2017
DOI: 10.1016/j.matdes.2017.09.013
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Properties of perovskite ferroelectrics deposited on F doped SnO 2 electrodes and the prospect of their integration into perovskite solar cells

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Cited by 13 publications
(9 citation statements)
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“…It has the best contact with Si and forms a highly stable nanocrystal electron transport layer (ETL) in devices such as organic light-emitting diodes (OLEDs) and perovskite solar cells. 8 , 9 …”
Section: Introductionmentioning
confidence: 99%
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“…It has the best contact with Si and forms a highly stable nanocrystal electron transport layer (ETL) in devices such as organic light-emitting diodes (OLEDs) and perovskite solar cells. 8 , 9 …”
Section: Introductionmentioning
confidence: 99%
“…It has the best contact with Si and forms a highly stable nanocrystal electron transport layer (ETL) in devices such as organic light-emitting diodes (OLEDs) and perovskite solar cells. 8,9 The United States Geological Survey (USGS) reports that 31,000 tons of tin were produced in 2019, with China accounting for 27% of the total. 10 Tin-based materials, especially SnO 2 , have attracted a lot of attention in the field of sensors because they have the most chemically and thermally stable oxidation states and are amazingly sensitive to various gas species.…”
Section: Introductionmentioning
confidence: 99%
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“…Though similar kind of behavior has been noticed in several works with FTO bottom electrode based capacitor devices, the probable mechanism behind this is still undefined. [21][22][23][24] As it has been noticed in ln I versus ln V analysis that the slope increases sharply with increasing field at both sides and thus indicates the contribution of space charge limited current. The capacitance versus electric field loops exhibit a drastic increase in capacitance after the ferroelectric switching occurs.…”
Section: Polarization-electric Field Studymentioning
confidence: 82%
“…With increasing thickness, the surface roughness also enhances and needs a systematic evaluation of its effect upon the ferroelectric characteristics. Though FTO has been excessively used in inorganic FeRAM devices 21–23 and in solar cells 24 because of their mechanical stability, very few reports exist in organic FeRAM 25 devices. Literature reveals that a rough electrode can also cause excess leakage current in the device and as well a sharp enhancement in electrical capacitance 26,27 .…”
Section: Introductionmentioning
confidence: 99%