Proposal of New Nonvolatile Memory with Magnetic Nano-Dots

Sakaguchi, Takeshi; Hong, Youn Gi; Kobayashi, Mariko; Takata, Masayuki; Choi, Hoon; Shim, JeoungChill; Kurino, Hiroyuki; Koyanagi, Mitsumasa

doi:10.1143/jjap.43.2203

Cited by 21 publications

(16 citation statements)

References 6 publications

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“…After a 10-nm-thick thermal oxide layer was grown by thermal oxidation as the tunneling oxide, the FePt nanodots for the first dot layer were dispersed in silicon oxide of 2 nm thickness and formed on the tunneling oxide by SAND. 17) Then, an inter-oxide of a 6-nm-thick sputter oxide layer was formed by RF sputtering. Also, an additional 2-nm-thick FePt nanodot layer was formed using the same SAND method and a following inter-tunnel oxide of a 6-nm-thick sputter oxide layer was formed by RF sputtering.…”

Section: Fabrication Of Multiple Fept Nanodot Structurementioning

confidence: 99%

“…Here, metal oxide semiconductor (MOS) capacitors with a floating gate composed of multiple FePt nanodot layers by self-assembled nanodot deposition (SAND) were fabricated. 17) In addition, the effect of memory window for a nanodot diameter was investigated, and an FePt nanodot diameter was optimized for a larger memory window. Finally, for the samples with four FePt nanodot layers as a floating gate, data retention and endurance characteristics were evaluated.…”

Section: Introductionmentioning

confidence: 99%

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Multilevel Charge Storage in a Multiple Alloy Nanodot Memory

Lee

Song

et al. 2011

Jpn. J. Appl. Phys.

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The initial susceptibility and the average free-energy singularities for a disordered Ising spin system on a Cayley tree have been studied. A set of recursion relations for the probability distribution functions of the effective fields at each generation of the tree is formulated. It is shown that the susceptibility is Curie-like at any temperature, for an equal number of ferromagnetic and antiferromagnetic bonds. The average free energy behaves as hZ"(Tl where his an applied field and 1 C K < CO for 0 C T C T,; the latter is a finite limiting temperature.

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Section: Fabrication Of Multiple Fept Nanodot Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Multilevel Charge Storage in a Multiple Alloy Nanodot Memory

Lee

Song

et al. 2011

Jpn. J. Appl. Phys.

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“…Typical applications are already in progress, such as several crossbar approaches [29]- [46] that will allow us to construct molecular memories and logic, hopefully at extremely lower fabrication costs. On the other hand, magnetic storage devices, in which magnetic states are used to store information permanently, are also being developed [47]- [58].…”

Section: Aren't Computers Fast Enough?mentioning

confidence: 99%

The Nanocell: A Chemically Assembled Molecular Electronic Circuit

Seminario

Tarigopula

2006

IEEE Sensors J.

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Computing is one of the most demanding applications of integrated circuits (IC). It requires the highest possible speed to process information. Higher speeds imply smaller circuits and, therefore, higher densities of integration. Thus, the most effective way to make faster circuits is by "scaling down," i.e., reducing the device size proportionally. However, under present technology, miniaturization is mainly constrained by the amount of heat dissipated as the number of devices increases per unit area and by the ability of lithographic tools to chisel smaller details on bulk substrates; these are technical constraints. However, there are physical or natural constraints which are practically material independent (speed of light, size of atoms, response of the electron, and Planck constant). Two main scenarios have been proposed for using molecules or small group of atoms (clusters) to build devices able to perform logical operations, bypassing, to some extent, problems undermining miniaturization or scaling-down processes for IC. One approach is the crossbar; a promising technology that uses directed self-assembly to make nanoarrays similar in shape to those already fabricated at larger scales by standard electronics. The other approach is the nanocell, which is a complementary design in the sense that it builds up (bottom-up) from single molecules into precise and complex structures that can be approached by standard lithography. This paper focuses on the description, advances, and possibilities of the nanocell approach, which takes advantage of the great skills developed by chemists to synthesize molecules with precise arrangements of atoms in a molecule. The nanocell concept does not require a deterministic assembly or deposition of molecules and clusters, thanks to the recently discovered programmability feature of molecules. Thus, in this paper, it is shown that the nanocell is a feasible concept for the development of electronics beyond deterministic lithographic approaches presently used in the fabrication of IC. The great importance and advantage of having molecular size computing devices is their ability to interact directly with external agents or molecules producing a sensor device already attached to a nanoprocessor that is able to strongly help in the stand-off detection of chemical and biological agents.

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“…By replacing nonmagnetic NDs with ferromagnetic NDs, floating gate MIS memories will exhibit new functionalities and improvements, including control of charging and discharging properties of the NDs floating gate and improved the retention characteristics due to the tunnel magnetoresistance effect between NDs and ferromagnetic gate electrodes. 11,12) Recently, the application of the magnetic NDs to spin-torque-driven memories and devices such as spin-transfer torque magnetoresistive random-access memories 13,14) and spin-transfer oscillators 15) has also attracted substantial attention due to their promise of high energy efficiency. However, for spintronic device applications, the formation of the magnetic NDs with high areal density and control of their magnetization properties are still major concerns.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots

Honda¹,

Makihara²,

Taoka³

et al. 2021

Jpn. J. Appl. Phys.

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We formed FePt magnetic nanodots (NDs) by exposing an ultrathin bilayer metal stack on ∼3.0 nm SiO2/Si(100) substrates to a remote H2 plasma (H2-RP) and studied the effect of external heating during the exposure to H2-RP on the formation and magnetic properties of NDs. The ultrathin bilayer with a uniform surface coverage drastically changed to NDs with an areal density as high as ∼3.5 × 1011 cm−2 by exposing to H2-RP with external heating. We also found that NDs formed by the exposure to H2-RP at 400 °C exhibited a perpendicular anisotropy with a perpendicular coercivity of ∼1.5 kOe, reflecting the magneto-crystalline anisotropy of (001)-oriented L10 phase FePt.

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Proposal of New Nonvolatile Memory with Magnetic Nano-Dots

Cited by 21 publications

References 6 publications

Multilevel Charge Storage in a Multiple Alloy Nanodot Memory

Multilevel Charge Storage in a Multiple Alloy Nanodot Memory

The Nanocell: A Chemically Assembled Molecular Electronic Circuit

Effect of substrate temperature on plasma-enhanced self-assembling formation of high-density FePt nanodots

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