Proposed size-effect high-electron-mobility transistor

Kornreich, Philipp; Walsh, L. H.; Flattery, James; Isa, Saliman

doi:10.1016/0038-1101(86)90089-4

Cited by 20 publications

(12 citation statements)

References 11 publications

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“…It therefore has potential electronic applications in high-speed devices [2,3] magnetoresistors [4], and has been used previously as magnetic sensors [5], and infrared (IR) detectors [6]. It also has a large Bohr exciton radius of $60 nm [7,8], consequently making 1-D InSb nanowires an attractive semiconductor for quantum effect studies.…”

Section: Introductionmentioning

confidence: 99%

Growth of high quality, epitaxial InSb nanowires

Park¹,

Prokes²,

Twigg³

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Growth of high quality, epitaxial InSb nanowires

Park¹,

Prokes²,

Twigg³

et al. 2007

Journal of Crystal Growth

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“…Kornreich et al calculated the performance of CdTe/InSb/CdTe HEMTs and showed that, for a gate length of 0.5 m, a very high cutoff frequency of 439 GHz could be obtained. 1 Experimental results, however, have shown the difficulty of growing high-quality CdTe/InSb/CdTe heterostructures due to interdiffusion and roughness at the heterointerface. 2,3 Lattice-mismatched Al x In 1Ϫx Sb was therefore recently used as a barrier layer.…”

Section: Introductionmentioning

confidence: 96%

Increased electron mobility of InAsSb channel heterostructures grown on GaAs substrates by molecular beam epitaxy

Kudo

Mishima

Tanaka

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Another class of materials, antimonide-based compound semiconductors which usually have a narrow band gap, are widely regarded as the first candidate material for the fabrication of third generation infrared photon detectors [192] and integrated circuits with ultra-high speed and ultra-low power consumption [193,194]. In contrast to the AlAs-GaAs material system, antimonide semiconductors have large lattice mismatch with other widely employed semiconductors.…”

Section: Inas/inp/insb Heterostructured Nwsmentioning

confidence: 99%

“…Antimonide compound semiconductor materials, such as InSb, are ideal candidates to fabricate magnetoresistors [198], infrared detectors [192], and high-speed devices [193,194] due to their smallest band gap among all III-V semiconductors, highest bulk electron mobility [199], largest Land' eg-factor [200], and strong spin-orbit interaction. Furthermore, according to the theoretical studies on thermoelectric properties of III-V semiconductors, InSb is also considered to be the best choice for thermoelectric applications due to its small effective mass [201,202].…”

Section: Inas/inp/insb Heterostructured Nwsmentioning

confidence: 99%

Growth of III-V semiconductor nanowires and their heterostructures

Zou

Han

2016

Sci. China Mater.

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introduced by Wagner and Ellis in the 1960's to grow Si submicrosize whiskers [2]. Although Si nanowires are useful, particular their easy incorporation with mature Si technology, which makes products cheap and suitable for mass production, the indirect band gap of Si is hindering the application of this material in many fields where direct band gap is essential, such as optoelectronics. In this regard, III-V compound semiconductors are dominating due to their direct band gap and flexibility in band gap and lattice engineering. In the early 1990s, Scientists from Hitachi employed the VLS approach to grow III-V nanowires [3,4]. At that time, good position and orientation control was achieved as well as the demonstration of the first p-n junctions based on heterostructured nanowires [5]. These novel one-dimensional (1D) III-V nanostructures provide a good model system for investigating the dependence of electronic transport, optical, and mechanical properties on their confinement effects. They demonstrated the potential of these nanowires in the next-generation integrated circuits and functional devices, such as field-effect transistors [6−8], single-electron transistors [9], light-emitting devices [10], chemical sensors [11−14], and THz detectors [15].The control of NW growth is considered to be one of the key points and the foundation of successful NW-based device fabrication. The benefit of NWs is that due to their small radial dimension and the large aspect ratio, the strain in axial heterostructures induced by the lattice mismatch can be relaxed within a small region close to the interface. Therefore, there is virtually no limitation in the choice of materials by the requirement of lattice-matching.Another benefit of III-V semiconductor NWs is that by carefully choosing substrates, the growth of NWs can be self-assembled, and as-grown epitaxial NWs are free-standing. Additionally, by employing nanoscale lithography techniques, e.g., electron beam lithography, it is possible to realize the growth of NWs on pre-patterned substrates [16−20].ABSTRACT In this paper, we present a review about recent progress on the growth of III-V semiconductor homo-and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/ V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

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Proposed size-effect high-electron-mobility transistor

Cited by 20 publications

References 11 publications

Growth of high quality, epitaxial InSb nanowires

Growth of high quality, epitaxial InSb nanowires

Increased electron mobility of InAsSb channel heterostructures grown on GaAs substrates by molecular beam epitaxy

Growth of III-V semiconductor nanowires and their heterostructures

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