2015
DOI: 10.1002/aelm.201400056
|View full text |Cite
|
Sign up to set email alerts
|

Prospective of Semiconductor Memory Devices: from Memory System to Materials

Abstract: The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining. The conventional strategy for meeting such demand, i.e. shrinking of the memory cell size, will no longer be useful at some point in the future, owing to economic reasons and performance degradation. Nevertheless, performance of computing systems will keep improving for the next generation information technology. This indicates the necessity to consider a fundamentally disparate approach to enhance memory technology. Here… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
168
0
3

Year Published

2016
2016
2019
2019

Publication Types

Select...
9

Relationship

4
5

Authors

Journals

citations
Cited by 188 publications
(171 citation statements)
references
References 215 publications
0
168
0
3
Order By: Relevance
“…In fact, in some cases sputtered RS media have shown better RS performance than ALD ones due to their larger initial density of defects, which can trigger the initial BD at lower voltages, producing less damage in the insulator and preventing irreversible BD. [71][72][73][74][75] Many recent reports showed several-layer 3D vertical RS devices where the RS films were prepared by physical vapor deposition; this may be good as a proof-of-concept, but these devices are not expected to show high performances in terms of cell-to-cell variability unless they are fabricated using ALD. On the contrary, sputtered HfO 2 shows stable RS without the need of such annealing.…”
Section: Deposition Of the Rs Mediummentioning
confidence: 99%
“…In fact, in some cases sputtered RS media have shown better RS performance than ALD ones due to their larger initial density of defects, which can trigger the initial BD at lower voltages, producing less damage in the insulator and preventing irreversible BD. [71][72][73][74][75] Many recent reports showed several-layer 3D vertical RS devices where the RS films were prepared by physical vapor deposition; this may be good as a proof-of-concept, but these devices are not expected to show high performances in terms of cell-to-cell variability unless they are fabricated using ALD. On the contrary, sputtered HfO 2 shows stable RS without the need of such annealing.…”
Section: Deposition Of the Rs Mediummentioning
confidence: 99%
“…[ 2,3 ] In the crossbar-structured RRAM, the main functional resistance switching memory is placed in between two metal electrodes, each serving as a word or bit line. [ 2,3 ] In the crossbar-structured RRAM, the main functional resistance switching memory is placed in between two metal electrodes, each serving as a word or bit line.…”
Section: Doi: 101002/aelm201600326mentioning
confidence: 99%
“…In recent years, electronic phase-change random access memories (PRAM) have raised particular interest since they enable data storage attributes, which differ from those of the presently employed Flash and dynamic random access memories (DRAM). In particular, PRAMs uniquely combine nonvolatility and high switching speeds (10 ns) [5] with good endurance (10 10 cycles) [6]. In the last decade, substantial progress has been made in understanding structure, bonding, and charge transport in crystalline PCMs [7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%