Pulse broadening in a Ne–CuBr–Zn laser system by optical resonance pumping

Fujii, K.; Uno, Katsuhiro; Tawada, Fuyuki; Hishida, Takanori; Nishizawa, Masatoyo; Suzuki, Masahiro; Oouchi, K.; Tsuji, Ryusuke; Saitô, Hiroshi

doi:10.1063/1.1458074

Cited by 9 publications

(5 citation statements)

References 10 publications

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“…However, as Kasuya et al point out [102], it is difficult to explain both the baryon asymmetry and the dark matter density simultaneously. Nevertheless, there are scenarios where unstable Q-balls are the source for both baryogenesis and neutralino dark matter [103]. 19 For a PQ symmetry to exist one needs to have two SU (2) doublet Higgs fields, φ 1 and φ 2 , rather than just the single Higgs field of the Standard Model H (and its Hermitian adjoint H † ).…”

Section: Natural Connection Of Axions With Leptogenesismentioning

confidence: 99%

Leptogenesis as the Origin of Matter

Buchmüller

Peccei

Yanagida

2005

Annu. Rev. Nucl. Part. Sci.

687

592

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We explore in some detail the hypothesis that the generation of a primordial leptonantilepton asymmetry (Leptogenesis) early on in the history of the Universe is the root cause for the origin of matter. After explaining the theoretical conditions for producing a matter-antimatter asymmetry in the Universe we detail how, through sphaleron processes, it is possible to transmute a lepton asymmetry -or, more precisely, a (B-L)-asymmetry -into a baryon asymmetry. Because Leptogenesis depends in detail on properties of the neutrino spectrum, we review briefly existing experimental information on neutrinos as well as the seesaw mechanism, which offers a theoretical understanding of why neutrinos are so light.

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Section: Natural Connection Of Axions With Leptogenesismentioning

confidence: 99%

Leptogenesis as the Origin of Matter

Buchmüller

Peccei

Yanagida

2005

Annu. Rev. Nucl. Part. Sci.

687

592

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“…Copper(I) bromides have been used in organic synthesis [1,2], batteries [3], gas sensors [4][5][6] and lasers [7][8]. Several methods have been developed to grow copper(I) bromide thin films based on vapor-phase techniques, such as radio frequency magnetron sputtering [9] and molecular beam epitaxy [10,11].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of highly oriented CuBr thin films through room temperature electrochemical route

Kang

Yong

et al. 2008

Electrochimica Acta

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“…CuBr is a I–VII compound semiconductor material with great potential for short-wavelength applications due to its extremely large excitonic binding energy (∼108 meV) and direct band gap (∼3.1 eV at 300 K). − It exhibits good transparency (>80%) throughout the major portion of the visible region (above 420 nm) and shows strong absorption in the UV-violet region of the spectrum . Although, there are numerous reports on the excitonic and nonlinear optical properties of CuBr, − there are relatively few studies on the semiconducting properties of this material. − The poor hole conductivity of as-deposited (ASD) CuBr films represents a major limitation for the adoption of these materials, and thus the deposition of good quality CuBr films with increased p-type conductivity would be an extremely important development for future applications of this material system.…”

Section: Introductionmentioning

confidence: 99%

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

Vijayaraghavan¹,

McCoy²,

Chauhan³

et al. 2014

J. Phys. Chem. C

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p-type transparent conducting CuBr thin films were grown by thermal evaporation of CuBr followed by oxygen plasma treatment. Efficient incorporation of oxygen into the CuBr films was revealed, and the influence of plasma exposure on the electrical, structural, optical, and electronic properties of CuBr films was investigated. Xray diffraction (XRD) analysis indicated the Zincblende structure of the oxygen plasma treated CuBr (OCB) films with the formation of nanocrystalline grains preferentially oriented along the (111) direction. p-type conducting OCB films show >85% average transmittance along with hole concentration, conductivity and Hall mobility values of ∼10 19 cm −3 , ∼1.5 S cm −1 and ∼0.45 cm 2 V −1 s −1 , respectively. The X-ray photoelectron spectra of the OCB films demonstrated that the plasma exposure resulted in a significant increase in the O 1s signal at the surface of OCB films. On the basis of the experimental results from the Hall measurements and X-ray photoemission, a possible explanation comprising the formation of a surface CuO layer is also proposed to elucidate the increase in the p-type conductivity of the OCB films. Strong room temperature emission of OCB films at around 416 nm was also observed, the intensity of which decreased with the increase of oxygen plasma exposure time. The results present oxygen plasma exposure as a simple and promising technique for the production of CuBr-based p-type materials for future transparent electronics.

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Pulse broadening in a Ne–CuBr–Zn laser system by optical resonance pumping

Cited by 9 publications

References 10 publications

Leptogenesis as the Origin of Matter

Leptogenesis as the Origin of Matter

Growth and characterization of highly oriented CuBr thin films through room temperature electrochemical route

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

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