Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs

Moll, N.; Hueschen, M. R.; Fischer-Colbrie, A.

doi:10.1109/16.3339

Cited by 219 publications

(53 citation statements)

References 12 publications

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“…To extract an effective channel electron velocity from the small-signal characteristics, the method proposed by Moll and co-workers [8] is well-known. However, their method did not take the delay component due to parasitic series resistances into consideration.…”

Section: Small-signal Characteristicsmentioning

confidence: 99%

AlGaN/GaN heterojunction FETs for high‐power applications

Kuzuhara

Ando

Inoue

et al. 2003

Electron Comm Jpn Pt II

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SUMMARYGaN and its heterojunction structures are attracting considerable attention as materials for high-voltage, highfrequency power device applications. This paper gives an overview of the basic device structure, process technology, and recent device performance achieved with AlGaN/GaN heterojunction FET structures. The emphasis is on the performance of power amplifiers developed for use in cellular base station transmitters and pseudo-millimeter-wave wireless access systems. Future research topics and prospects of nitride-based transistors are also discussed.

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Section: Small-signal Characteristicsmentioning

confidence: 99%

AlGaN/GaN heterojunction FETs for high‐power applications

Kuzuhara

Ando

Inoue

et al. 2003

Electron Comm Jpn Pt II

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“…This top AlGaAs layer is deltadoped, rather than uniformly, in order to take advantage of high channel electron density, reduced trapping effects, and improved threshold voltage as well as high breakdown characteristics. 13,14 A schematic cross section of the grown RCE heterojunction MSM is shown in Fig. 2.…”

Section: Xiying Chen and Bahram Nabet A)mentioning

confidence: 99%

Resonant-cavity-enhanced heterostructure metal–semiconductor–metal photodetector

Chen

Nabet

Quaranta

et al. 2002

Applied Physics Letters

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We report a GaAs-based high-speed, resonant-cavity-enhanced, heterostructure metal–semiconductor–metal photodetector with Al0.24Ga0.76As/Al0.9Ga0.1As distributed Bragg reflector operating around 850 nm. The photocurrent spectrum shows a clear peak at this wavelength with full width at half maximum (FWHM) of around 30 nm. At resonance wavelength, a seven-fold increase can be achieved in quantum efficiency compared to a detector of the same absorption depth. The top reflector is a delta modulation doped Al0.24Ga0.76As that also acts as the barrier enhancement layer thus providing very low dark current values. The breakdown voltage is above 20 V. Time response measurements show rise time, fall time, and FWHM of 8.8 ps, 9 ps, and 8.1 ps, respectively, giving a 3-dB bandwidth of about 33 GHz. Combination of low dark current, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device especially suitable for short haul communications purposes.

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“…For this purpose the total delay time τ TOTAL = 1/2π f T is plotted as a function of the inverse drain current I D at constant V DS (Fig. 3) [6][7][8]. The total delay time τ is the sum of the intrinsic transit time τ TRANSIT and the parasitic channel charging time.…”

Section: Introductionmentioning

confidence: 99%

Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high‐electron‐mobility transistors

Marso¹,

Bernát²,

Javorka³

et al. 2005

phys. stat. sol. (c)

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We have fabricated undoped as well as modulation-doped AlGaN/GaN HEMTs on SiC substrate. The influence of the carrier supply layer on device performance is investigated by Hall, channel conductivity, small signal RF and delay time evaluation. While the doping layer improves the DC performance it degrades the RF behaviour of the device with the highest carrier supply doping of 5x10 18 cm -3. The channel conductivity measurements show identical dependence of the mobility on carrier concentration for all samples. The saturation velocity, extracted by evaluation of the total delay time as function of the inverse drain current, decreases from 0.86x10 7 cm/s for the undoped device to 0.7x10 7 cm/s for the highest doped HEMT. This result shows that the degradation of RF performance is due to the reduction of the effective saturation velocity caused by the carrier supply layer.

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Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs

Cited by 219 publications

References 12 publications

AlGaN/GaN heterojunction FETs for high‐power applications

AlGaN/GaN heterojunction FETs for high‐power applications

Resonant-cavity-enhanced heterostructure metal–semiconductor–metal photodetector

Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high‐electron‐mobility transistors

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