Pulse-Mode DynamicR_onMeasurement of Large-Scale High-Power AlGaN/GaN HFET

Abstract

We propose pulse‐mode dynamic Ron measurement as a method for analyzing the effect of stress on large‐scale high‐power AlGaN/GaN HFETs. The measurements were carried out under the soft‐switching condition (zero‐voltage switching) and aimed to minimize the self‐heating problem that exists with the conventional hard‐switching measurement. The dynamic Ron of the fabricated AlGaN/GaN MIS‐HFETs was measured under different stabilization time conditions. To do so, the drain‐gate bias is set to zero after applying the off‐state stress. As the stabilization time increased from 0.1 μs to 100 ms, the dynamic Ron decreased from 160 Ω to 2 Ω. This method will be useful in developing high‐performance GaN power FETs suitable for use in high‐efficiency converter/inverter topology design.

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