Pulsed Bias Stress in Pentacene Thin Film Transistors and Effect of Contact Material

Abstract

The current instability of pentacene organic thin film transistors (OTFTs) under pulse bias stress and the effect of contact material are reported. OTFTs with Cu electrodes and Au electrodes were compared. The OTFTs with Cu electrodes show smaller current change and almost independent of frequency, which can be explained by the reduction of the density of deep trap sites existing at the contact regions. The use of Cu electrodes causes the elimination of trap sites and realizes reversible trapping and detrapping.