Stable organic thin-film transistors using full solution-processing and low-temperature sintering silver nanoparticle inks

Fukuda, Kenjiro; Sekine, Toshikazu; Kobayashi, Yu; Kumaki, Daisuke; Itoh, Masami; Nagaoka, Minami; Toda, Takami; Saito, Sayaka; Kurihara, Masato; Sakamoto, Masatomi; Tokito, Shizuo

doi:10.1016/j.orgel.2012.05.016

Cited by 31 publications

(17 citation statements)

References 23 publications

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“…There are two major approaches for suppressing the bias‐stress effect. One is to reduce trap sites in the semiconductor layer such as by physically eliminating them with thermal annealing , and the other is to improve the semiconductor/dielectric interface, e.g ., by reducing roughness at the interface , forming self‐assembled monolayer modification on dielectric surfaces , or using hydroxyl‐free amorphous fluoropolymers as gate dielectric layers .…”

Section: Introductionmentioning

confidence: 99%

Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics

Fukuda

Suzuki

Kobayashi

et al. 2013

Physica Status Solidi (a)

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Bias-stress effects in pentacene thin-film transistors (TFT) with parylene-C and amorphous fluoropolymers as bilayer gate dielectric layers are systematically investigated. The threshold voltage shift can be controlled systematically by changing the thicknesses of the two dielectric layers. The shift is proportional to a proportion of a potential drop between parylene-C layer to the total potential drop between gate and source electrodes, and the threshold voltage shift can be fitted to a sum of the exponential functions. Devices with optimized thicknesses of the bilayer gate dielectrics show remarkable stability under continuous gate-bias voltage stress over long periods, demonstrating shifts in threshold voltage of less than 0.5 V after 48 h.

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Section: Introductionmentioning

confidence: 99%

Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics

Fukuda

Suzuki

Kobayashi

et al. 2013

Physica Status Solidi (a)

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“…The width to length ratio ( W / L ) of the FET devices is 100/1. The main reason for using silver as the electrode metal is due to its great potential in printable electronics: solution‐processable silver nanoparticle ink can be sintered at a low temperature of 100 °C or less . Moreover, silver is a much cheaper metal than gold, a widely used electrode metal for OFET devices.…”

Section: Resultsmentioning

confidence: 99%

Low band‐gap D–A conjugated copolymers based on anthradithiophene and diketopyrrolopyrrole for polymer solar cells and field‐effect transistors

Huang

Zhu

Zhang

et al. 2014

J. Polym. Sci. Part A: Polym. Chem.

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Two conjugated copolymers PADT‐DPP and PADT‐FDPP based on anthradithiophene and diketopyrrolopyrrole, with thiophene and furan as the π‐conjugated bridge, respectively, were successfully synthesized and characterized. The number‐averaged molecular weights of the two polymers are 38.7 and 30.2 kg/mol, respectively. Polymers PADT‐DPP and PADT‐FDPP exhibit broad absorption bands and their optical band gaps are 1.44 and 1.50 eV, respectively. The highest occupied molecular orbital energy level of PADT‐DPP is located at −5.03 eV while that of PADT‐FDPP is at −5.16 eV. In field‐effect transistors, PADT‐DPP and PADT‐FDPP displayed hole mobilities of 4.7 × 10−3 and 2.7 × 10−3 cm2/(V s), respectively. In polymer solar cells, PADT‐DPP and PADT‐FDPP showed power conversion efficiency (PCE) of 3.44% and 0.29%, respectively. Atomic force microscopy revealed that the poor efficiency of PADT‐FDPP should be related to the large two‐phase separation in its active layer. If 1,8‐diiodooctane (DIO) was used as the solvent additive, the PCE of PADT‐DPP remained almost unchanged due to very limited morphology variation. However, the addition of DIO could remarkably elevate the PCE of PADT‐FDPP to 2.62% because of the greatly improved morphology. Our results suggest that the anthradithiophene as an electron‐donating polycyclic system is useful to construct new D–A alternating copolymers for efficient polymer solar cells. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014, 52, 1652–1661

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“…In most solution-processed devices, the electrodes are usually deposited by thermal evaporation or sputtering. To achieve a fully solution-processed OFET, for scalability and commercialization purposes, silver nanoparticles were deposited from solution and sintered to fabricate the electrodes [ 30 ]. This is applicable to all thin film devices; however, in this approach, achieving suitable ohmic contact between the electrode and the underlying layer is a challenge.…”

Section: Thin Film Transistorsmentioning

confidence: 99%

Inorganic and Organic Solution-Processed Thin Film Devices

Eslamian

2016

Nano-Micro Lett.

175

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Thin films and thin film devices have a ubiquitous presence in numerous conventional and emerging technologies. This is because of the recent advances in nanotechnology, the development of functional and smart materials, conducting polymers, molecular semiconductors, carbon nanotubes, and graphene, and the employment of unique properties of thin films and ultrathin films, such as high surface area, controlled nanostructure for effective charge transfer, and special physical and chemical properties, to develop new thin film devices. This paper is therefore intended to provide a concise critical review and research directions on most thin film devices, including thin film transistors, data storage memory, solar cells, organic light-emitting diodes, thermoelectric devices, smart materials, sensors, and actuators. The thin film devices may consist of organic, inorganic, and composite thin layers, and share similar functionality, properties, and fabrication routes. Therefore, due to the multidisciplinary nature of thin film devices, knowledge and advances already made in one area may be applicable to other similar areas. Owing to the importance of developing low-cost, scalable, and vacuum-free fabrication routes, this paper focuses on thin film devices that may be processed and deposited from solution.

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Stable organic thin-film transistors using full solution-processing and low-temperature sintering silver nanoparticle inks

Cited by 31 publications

References 23 publications

Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics

Suppression of threshold voltage shifts in organic thin‐film transistors with bilayer gate dielectrics

Low band‐gap D–A conjugated copolymers based on anthradithiophene and diketopyrrolopyrrole for polymer solar cells and field‐effect transistors

Inorganic and Organic Solution-Processed Thin Film Devices

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