PZT thin film bulk acoustic wave resonators and filters

Kirby, Paul B.; Su, Qingxin; Komuro, E.; Zhang, Q.; Imura, Masaaki; Whatmore, R. W.

doi:10.1109/freq.2001.956364

Cited by 17 publications

(11 citation statements)

References 3 publications

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“…Examples are manifold. There have been several reports on PZT bulk acoustic wave (BAW) resonators reaching GHz speed, for ∼1

m thick layers [ 53 , 54 ]. This even applies to conventional piezoelectric (low polarization) AlN BAW resonators (e.g., [ 55 ]).…”

Section: Discussionmentioning

confidence: 99%

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

Hueting

2018

Micromachines

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For some years now, the ever continuing dimensional scaling has no longer been considered to be sufficient for the realization of advanced CMOS devices. Alternative approaches, such as employing new materials and introducing new device architectures, appear to be the way to go forward. A currently hot approach is to employ ferroelectric materials for obtaining a positive feedback in the gate control of a switch. This work elaborates on two device architectures based on this approach: the negative-capacitance and the piezoelectric field-effect transistor, i.e., the NC-FET (negative-capacitance field-effect transistor), respectively π-FET. It briefly describes their operation principle and compares those based on earlier reports. For optimal performance, the adopted ferroelectric material in the NC-FET should have a relatively wide polarization-field loop (i.e., “hard” ferroelectric material). Its optimal remnant polarization depends on the NC-FET architecture, although there is some consensus in having a low value for that (e.g., HZO (Hafnium-Zirconate)). π-FET is the piezoelectric coefficient, hence its polarization-field loop should be as high as possible (e.g., PZT (lead-zirconate-titanate)). In summary, literature reports indicate that the NC-FET shows better performance in terms of subthreshold swing and on-current. However, since its operation principle is based on a relatively large change in polarization the maximum speed, unlike in a π-FET, forms a big issue. Therefore, for future low-power CMOS, a hybrid solution is proposed comprising both device architectures on a chip where hard ferroelectric materials with a high piezocoefficient are used.

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“…Examples are manifold. There have been several reports on PZT bulk acoustic wave (BAW) resonators reaching GHz speed, for ∼1

m thick layers [ 53 , 54 ]. This even applies to conventional piezoelectric (low polarization) AlN BAW resonators (e.g., [ 55 ]).…”

Section: Discussionmentioning

confidence: 99%

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

Hueting

2018

Micromachines

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“…These bias-induced electrostrictive phenomena are resulting in non-linear effects such as instabilities of the device capacitance and increased losses at specific resonant 4 frequencies in the microwave domain. Although these acoustic resonance phenomena can be appropriately used to develop voltage controlled resonators or filters 35,36 they may become easily a critical issue for high-frequency applications where losses, stability and linearity of the agile capacitors are essential.…”

Section: Introductionmentioning

confidence: 99%

Electrical transport properties and modelling of electrostrictive resonance phenomena in Ba2/3Sr1/3TiO3 thin films

Ghalem

Huitema

Crunteanu

et al. 2016

Journal of Applied Physics

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We present the conduction mechanisms of Ba 2/3 Sr 1/3 TiO 3 thin films integrated in metal-insulator-metal (MIM) capacitors and the modelling of the frequency-dependent electrostrictive resonances (in the 100 MHz-10 GHz domain) induced in the devices upon applying different voltage biases. Au/BST/Ir MIM structures on MgO substrates have been fabricated and, depending on their specific polarization, we highlighted different conduction mechanisms in the devices. Depending on the dc bias polarity, the conduction current across the material shows a space-charge-limited-current behavior under negative polarization, while under positive bias the conduction obeys an electrode-limited Schottky-type law at the Au/ BST interface. The application of an electric field on the device induces the onset of acoustic resonances related to electrostrictive phenomena in the ferroelectric material. We modeled these acoustic 2 resonances over a wide frequency range, by using a modified Lakin model which takes into account the dispersions of acoustic properties near the lower electrode/ thin film interface. I.

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“…The resonator is based on a thin film FBAR (thin Film Bulk Acoustic Resonator) structure [4]. The PZT film is sandwiched between 2 electrodes to form a vibrating membrane once released by bulk micromachining of the silicon (Fig.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of PZT Composite Thick Films for High Frequency Membrane Resonators

et al. 2004

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High frequency, thickness mode resonators were fabricated using a 7 µm PZT thick film which was produced using a modified composite ceramic sol-gel process. Initial studies dealt with the integration of the PZT thick film onto the substrate. Two different diffusion barrier layers were tested, titanium oxide and zirconium oxide, in conjunction with the use of 2 types of silicon substrate (differing in the etch stop layer employed, either silicon nitride or silicon oxide). Zirconium oxide gave good results in conjunction with silicon oxide. Using these conditions, devices were produced and the acoustic properties measured for different electrode sizes ranging from 45 * 45 to 250 * 250 µm 2 . The best electrode size, which maximised the acoustic response and minimised the insertion loss, was found to have an area of 110 * 110 µm 2 . This device showed a resonant frequency of about 200 MHz, an effective electro-mechanical coupling coefficient of 0.29 and a Q factor of 22.

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PZT thin film bulk acoustic wave resonators and filters

Cited by 17 publications

References 3 publications

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

Electrical transport properties and modelling of electrostrictive resonance phenomena in Ba2/3Sr1/3TiO3 thin films

Fabrication of PZT Composite Thick Films for High Frequency Membrane Resonators

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