1994
DOI: 10.1016/0039-6028(94)90912-1
|View full text |Cite
|
Sign up to set email alerts
|

Quantum transport in strained layer superlattices

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

1994
1994
2000
2000

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(2 citation statements)
references
References 8 publications
0
2
0
Order By: Relevance
“…[1][2][3][4][5][6][7] In particular, InAs x Sb 1Ϫx /InAs multiquantum well structures deposited on InAs can be tailored to span the 2-6 m range. Improvements in device performance can be achieved by taking advantage of strain effects in the heteroepitaxial quantum wells.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7] In particular, InAs x Sb 1Ϫx /InAs multiquantum well structures deposited on InAs can be tailored to span the 2-6 m range. Improvements in device performance can be achieved by taking advantage of strain effects in the heteroepitaxial quantum wells.…”
Section: Introductionmentioning
confidence: 99%
“…been studied [2][3][4][5][6], and the anisotropy of the Fermi surface (and hence of the cyclotron mass) in these systems is well known. Investigations of superlattices with a single, only partially populated miniband showed that the effective mass for the movement along the axis of the superlattice is enhanced relative to the bulk value [2].…”
Section: Introductionmentioning
confidence: 99%