Radiation Effects in Semiconductor Diodes

Вавилов, Виктор Сергеевич; Ukhin, N.A.

doi:10.1007/978-1-4684-9069-5_5

Cited by 3 publications

(3 citation statements)

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“…The bond centered H complex was observed in c-Si after 7 MeV proton implantation at 80 K. High energy protons are incorporated in the c-Si lattice and at low temperature form Si-H-Si complexes, which already anneal completely at 200 K. The formation and annealing of the bond centered H complex are qualitatively in line with the behavior of the H-related centers observed in the present study. 2 MeV electron bombardment performed at about 100 K creates defects partially by atomic displacements [50]. We can speculate that Si-H-Si centers can be created as a result of such H displacement, similarly to the creation of these states in H-implanted crystalline silicon.…”

Section: Discussionmentioning

confidence: 85%

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

Astakhov

Carius

Petrusenko

et al. 2012

J. Phys.: Condens. Matter

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After irradiation of hydrogenated amorphous and microcrystalline silicon (a-Si:H and μc-Si:H) with 2 MeV electrons at 100 K, we observe satellite-like components close to the dominating electron spin resonance (ESR) signal of these materials. The satellites overlap with the commonly observed dangling bond resonance and are proposed to originate from a hyperfine interaction with the nuclear magnetic moment of hydrogen atoms in a-Si:H and μc-Si:H. Our present study is focused on the verification of this hypothesis. Equivalent hydrogenated and deuterated a-/μc-Si:H/D materials have been investigated with ESR before and after 2 MeV electron bombardment. From the difference between ESR spectra of hydrogenated and deuterated samples we identify the doublet structure in the ESR spectra as a hyperfine pattern of hydrogen-related paramagnetic centers. The observations of H-related paramagnetic centers in a-/μc-Si:H are of particular interest in view of metastability models of a-Si:H, which include H-related complexes as precursors for the stabilization of the metastable Si dangling bonds. The nature of the observed center is discussed in the light of known H-related complexes in crystalline Si and suggested H-related dangling bonds in a-Si:H.

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Section: Discussionmentioning

confidence: 85%

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

Astakhov

Carius

Petrusenko

et al. 2012

J. Phys.: Condens. Matter

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“…Moreover, nuclear radiation can harm the crystal lattice of semiconductor materials within electronic devices, resulting in defects that ensnare charge carriers and impede electron mobility. Additionally, nuclear radiation can instigate chemical reactions that culminate in the formation of corrosive byproducts within electronic devices [17][18][19][20][21].…”

Section: Ecs Design Approaches For Collective Nbc Protection In Aircraftmentioning

confidence: 99%

Environmental control system (ECS) design approach for collective nuclear, biological, and chemical (NBC) protection in military aircraft: A review

Güler

2024

Res. Eng. Struct. Mat.

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This comprehensive review paper delves into Environmental Control System (ECS) design strategies tailored for collective Nuclear, Biological, and Chemical (NBC) protection in military aircraft, exploring key elements such as hardening, air-tight construction, and filtering within the framework of open-loop or closed-loop ECS configurations. Initially, the paper elucidates the NBC protection requirements stipulated in commonly applied regulations such as MIL-HDBK-516C, DEFSTAN, and EMACC, highlighting the imperative for ventilation air to be devoid of contaminants, as mandated by these regulations. Subsequently, the paper delineates the strategic framework for NBC defense in the military aerospace industry, emphasizing the principles of avoidance, protection, and decontamination. A comparative analysis between individual and collective protection strategies underscores the comprehensiveness of the latter, prompting a recommendation for ECS design approaches grounded in the principles of collective protection, namely hardening, air-tight construction, and filtering. Furthermore, the paper provides insights into the configurations of open-loop and partial closed-loop ECS, elucidating their architectures for NBC protection. A comparative evaluation of these configurations enables the identification of pertinent parameters crucial for informed selection. In conclusion, the paper posits that the partial closed-loop ECS configuration exhibits greater promise in delivering enhanced NBC protection compared to the open-loop configuration, particularly in military aircraft applications operating in NBC environments.

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“…This takes place in the case of the effect of radiations, which cannot generate "hard damages", as disordered regions, thermal spikes, clusters etc. [2].…”

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confidence: 99%

Investigation of the effect of large doses on the Si(Li) detector parameters

Koifman

Muminov

Yafasov

1982

phys. stat. sol. (a)

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The influence of 60Co γ‐rays and 3.5 MeV electrons on lithium‐doped silicon is investigated. An decrease of the “free lithium” concentration caused by the interaction between the lithium atoms and radiation inserted vacancies is observed. It is estimated that this process leads to the modification of the sensitive region of detectors, which manifests as an increase (or decrease) of the “compensation grade” and a change of the i‐regions sizes.

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Radiation Effects in Semiconductor Diodes

Cited by 3 publications

References 0 publications

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

The relationship between hydrogen and paramagnetic defects in thin film silicon irradiated with 2 MeV electrons

Environmental control system (ECS) design approach for collective nuclear, biological, and chemical (NBC) protection in military aircraft: A review

Investigation of the effect of large doses on the Si(Li) detector parameters

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