Raised-Source/Drain Double-Gate Transistor Design Optimization for Low Operating Power

Chen, Deirdre; Jacobson, Zachery A.; Liu, Tsu‐Jae King

doi:10.1109/ted.2013.2242893

Cited by 4 publications

(1 citation statement)

References 21 publications

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“…The works in the literature [ 12 , 14 ] proposed an RSD device combined with an offset gated structure, that also employed a double-channel to improve the high series resistance in the offset region and increased the on-state current. A double-gate RSD scheme was also proposed to enlarge the on-current performance [ 10 , 15 ]. The characteristics of all of these RSD structures are considered to be improved by raised source/drain (RSD) regions that can spread the high horizontal electric field at the drain area [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor

Chien

Yen

et al. 2021

Membranes

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The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization rate occurring at a drain side can be reduced, owing to a raised source/drain area that can disperse the drain electric field. In this study, we will discuss how the electric field at the drain side of an RSD device is reduced by a vertical lightly doped drain (LDD) scheme rather than a RSD structure. We used different raised source/drain forms to simulate the drain side electric field for each device, as well as their output characteristics, using Integrated Systems Engineering (ISE-TCAD) simulators. Different source and drain thicknesses and doping profiles were applied to verify the RSD mechanism. We found that the electric fields of a traditional device and uniform doping RSD structures are almost the same (~2.9 × 105 V/cm). The maximum drain electric field could be reduced to ~2 × 105 V/cm if a vertical lightly doped drain RSD scheme was adopted. A pure raised source/drain structure did not benefit the device characteristics if a vertical lightly doped drain design was not included in the raised source/drain areas.

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