Rapid zinc diffusion in gallium arsenide

Longini, R. L.

doi:10.1016/0038-1101(62)90002-3

Cited by 224 publications

(39 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The solubility of Zn Ga is much greater than that of Zn i , while the diffusivity of Zn Ga is much smaller that of Zn i . The interchange between Zn i and Zn Ga is governed by the dissociative mechanism [23] or the kick out mechanism [24]. Our recent publication [17] indicated that Zn diffusion is governed by the dissociative mechanism in the surface layer region:…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

2016

J Mater Sci

View full text Add to dashboard Cite

Understanding the Zn diffusion behavior in GaSb is very important to accurately control the distribution of Zn during the fabrication of photoelectric devices. The surface concentration and effective surface diffusivity are two key parameters for modeling the Zn profile in GaSb. The experimental results indicated that when the diffusion temperature and time are kept unchanged, the diffusion profiles with pure Zn, Zn-Sb, and Zn-Ga sources differ in the surface concentration and effective surface diffusivity. To quantitatively explain the effects of source composition on the two parameters, the relationship between the two parameters and the vapor pressure surrounding the GaSb wafer in the diffusion process was deduced based on a surface-equilibrium assumption and the substitutional-interstitial mechanism. The Ga/Sb/Zn ternary phase diagram was calculated and discussed for determining the vapor pressures in different source cases. The ratio of surface concentrations and that of effective surface diffusivities between different sources were obtained to quantitatively explain the experiment results. The theoretical and experimental results both indicated that adding Sb to pure Zn source keeps the surface concentration unchanged while slightly decreases the effective surface diffusivity, and that adding Ga to pure Zn source significantly decreases both the surface concentration and effective surface diffusivity.

show abstract

Section: Resultsmentioning

confidence: 99%

“…With the values of P Sb and P Zn given in Table 2, one can calculate the ratio of C sur and that of D sur between different sources through Eqs. (23) and (25), as shown in Table 3. The values obtained from the experimental profiles are also given in the table.…”

Section: The Ga/sb/zn Phase Diagrammentioning

confidence: 99%

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

2016

J Mater Sci

View full text Add to dashboard Cite

show abstract

“…3. These results would be caused by the increase of inactive Zn in InP as a result of the interstitial-substitutional mechanism [5]. Figure 3.…”

Section: Methodsmentioning

confidence: 99%

Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration

Yamaguchi

Nagira

Kawazu

et al. 2014

26th International Conference on Indium Phosphide and Related Materials (IPRM)

View full text Add to dashboard Cite

Short-Abstract-We investigated the Zn concentration dependence of Zn diffusion from Zn-doped InP (Zn-InP) to Rudoped InP (Ru-InP). As semi-insulated InP, Ru-InP shows advantages in terms of higher resistivity and lower capacitance when Ru-InP is sandwiched by Zn-InP. Control of the diffusion of Zn from the adjacent Zn-InP layer is required to achieve laser diodes with superior characteristics. In this paper, we examined the diffusion of Zn at a Ru-InP stacking structure sandwiched by Zn-InP using metal-organic vapor phase epitaxy.

show abstract

“…For the Zn diffusion with a deep front, the length of the Zn diffusion decreased as the Ru concentration increased. In terms of the interstitial-substitutional mechanism [15], it is believed that Zn at a substitutional site is more stable than Zn at an interstitial site owing to the effect of the hole trap levels induced in Ru-InP. The activation rate of Ru in InP is $ 6% [3].…”

Section: Ru Concentration [Cm -3 ]mentioning

confidence: 99%

Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers

Yamaguchi

Nagira

Kawazu

et al. 2015

Journal of Crystal Growth

View full text Add to dashboard Cite

Rapid zinc diffusion in gallium arsenide

Cited by 224 publications

References 2 publications

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

Effects of the composition of diffusion source on the surface concentration and effective surface diffusivity of Zn in n-GaSb

Dependence of the diffusion of zinc from zinc-into ruthenium-doped indium phosphide on zinc concentration

Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers

Contact Info

Product

Resources

About