Reactive ion etching of novel materials—GaN and SiC

Szczęsny, A.; Śniecikowski, P.; Szmidt, J.; Werbowy, A.

doi:10.1016/s0042-207x(02)00651-6

Cited by 33 publications

(14 citation statements)

References 8 publications

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“…on/in the silicon carbide substrate. As of today, there is a fairly large variety of techniques for the processing of silicon carbide that allow, to some extent, to solve the following problem: wet etching; etching in solvents, stimulated by femtosecond laser; plasma etching; etching in plasma atmospheric discharge; plasma jet processing, and etc [15][16][17][18][19][20][21][22][23][24][25] . The choice of silicon carbide processing method is determined by the specific target, but nevertheless any of the methods must meet a number of general requirements: minimal defect formation on the surface of the etched profile, high etching rates, and high directionality of the processed window during the etching process.…”

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confidence: 99%

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Осипов

Iankevich

Speshilova

et al. 2020

Sci Rep

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In this work, we demonstrate an effective way of deep (30 µm depth), highly oriented (90° sidewall angle) structures formation with sub-nanometer surface roughness (Rms = 0.7 nm) in silicon carbide (SiC). These structures were obtained by dry etching in SF6/O2 inductively coupled plasma (ICP) at increased substrate holder temperatures. It was shown that change in the temperature of the substrate holder in the range from 100 to 300 °C leads to a sharp decrease in the root mean square roughness from 153 to 0.7 nm. Along with this, it has been established that the etching rate of SiC also depends on the temperature of the substrate holder and reaches its maximum (1.28 µm/min) at temperatures close to 150 °C. Further temperature increase to 300 °C does not lead to the etching rate rising. The comparison of the results of the thermally stimulated process and the etching with a water-cooled substrate holder (15 °C) is carried out. Plasma optical emission spectroscopy was carried out at different temperatures of the substrate holder.

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confidence: 99%

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Осипов

Iankevich

Speshilova

et al. 2020

Sci Rep

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“…Furthermore, reactive ion etching (RIE) suffers from a relatively low etching rate and introduction of plasma-related damage. 11 Compared to these techniques, wet etching has the advantage of low surface damage and low cost while being readily available for large area fabrication. Stocker et al 12 and Zhuang and Edgar 13 reported on defect-selective etching of III-nitride crystals where etching hillocks or pits were observed on N-polar and III-polar surfaces, respectively.…”

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confidence: 99%

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Guo

Kirste

Bryan

et al. 2015

Applied Physics Letters

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“…Thus, in these conditions, photoresists are not suitable for SiC deep etching. The second mask was aluminium which is a metal frequently used in several technological steps [5]. This mask shows selectivity of about 12 but the real problem is the appearance of micromasking.…”

Section: Etching Maskmentioning

confidence: 99%

Deep SiC etching with RIE

Lazar

Vang

Brosselard

et al. 2006

Superlattices and Microstructures

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SiC is currently an important topic in power devices. This new technology leads to lower power losses, faster switching, and higher working temperature. The design of SiC power devices requires the integration of edge termination techniques to obtain a high blocking voltage. The mesa structure approach is one wellestablished method. It could be used alone or in combination with a Junction Termination Extension (JTE). The mesa consists of a structure that removes material around the pn-junction. Due to the strong Si-C bonds, conventional chemical-wet etching solutions are inefficient on SiC, so plasma methods are required to etch SiC.The presented work is based on the use of an RIE reactor with an SF 6 /O 2 plasma. Its geometry structure and parameters were optimized. An etch rate of 0.35 µm/min was obtained without any trenching phenomenon. Trenches deeper than 10 µm deep were realized with a nickel etching mask that shows a high selectivity. AFM analysis revealed an etched surface as smooth as the initial one.

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Reactive ion etching of novel materials—GaN and SiC

Cited by 33 publications

References 8 publications

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

KOH based selective wet chemical etching of AlN, AlxGa1−xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

Deep SiC etching with RIE

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