Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures

Eschbach, Markus; Młyńczak, Ewa; Kellner, Jens; Kampmeier, Jörn; Lanius, Martin; Neumann, Elmar; Weyrich, Christian; Gehlmann, Mathias; Gospodarič, Pika; Döring, Sven; Mußler, Gregor; Demarina, N. V.; Luysberg, M.; Bihlmayer, Gustav; Schäpers, Thomas; Pluciński, Ł.; Blügel, Stefan; Morgenstern, Markus; Schneider, Claus M.; Grützmacher, Detlev

doi:10.1038/ncomms9816

Cited by 100 publications

(99 citation statements)

References 33 publications

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“…Van der Waals (vdW) heterostructures composed of 2D layered materials have been attempted intensively recently due to the novel physical properties covering a wide range of electronic, optical, and optoelectronic systems 198, 199, 200, 201, 202, 203, 204, 205, 206, 207, 208, 209, 210, 211, 212, 213, 214, 215, 216, 217, 218, 219, 220, 221, 222, 223, 224, 225, 226, 227, 228, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238, 239, 240, 241, 242. Jo and co‐workers130 synthesized polymorphic 2D tin‐sulfides of either p‐type SnS or n‐type SnS 2 via adjusting hydrogen during the process.…”

Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

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Section: Preparation Methods and Characterizationsmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

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“…Topological surface states have been identified in all of the samples (see also Refs. [47,48]). Further, the energetic position of the Dirac point ε B (DP) was extracted from the ARPES data.…”

Section: Sample Descriptionmentioning

confidence: 99%

“…[46,47]), as well as in heterostructure samples, consisting of an n-type Bi 2 Te 3 and a p-type Sb 2 Te 3 layer (see Ref. [48]). In the latter the chemical …”

Section: Introductionmentioning

confidence: 99%

Photon drag effect in(Bi1−xSbx)2Te3three-dimensional topological insulators

et al. 2016

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We report on the observation of a terahertz radiation-induced photon drag effect in epitaxially grown nand p-type (Bi 1−x Sb x ) 2 Te 3 three-dimensional topological insulators with different antimony concentrations x varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a dc electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent can be generated in surface states. It arises due to the dynamical momentum alignment by time-and space-dependent radiation electric field and implies the radiation-induced asymmetric scattering in the electron momentum space. We show that the photon drag current may also be generated in the bulk. Both surface states and bulk photon drag currents behave identically upon variation of such macroscopic parameters as radiation polarization and photocurrent direction with respect to the radiation propagation. This fact complicates the assignment of the trigonal photon drag effect to a specific electronic system.

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“…For this reason, the TSS is always unoccupied in the ground state and can be revealed by ultrafast optical excitation, which in turn has been used to establish the TSS of Sb 2 Te 3 as a unique channel for the generation and control of transient spin currents that are of importance for spintronics 15 . Moreover, due to its p-doping, interfacing or alloying Sb 2 Te 3 with other prototypical TIs such as Bi 2 Te 3 has been proposed as one of the promising routes to develop stable topological p-n junctions useful for device applications 16 . In fact, such p-n junctions might serve as the basis of future optoelectronics, as they are expected to host single gapless chiral edge states localized along the p-n interface that can be controlled by external gating or applied magnetic fields 17 .…”

Section: Introductionmentioning

confidence: 99%

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

et al. 2016

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Within the last few years topological insulators (TIs) have attracted a lot of interest due to their unique electronic structure with spin-polarized topological surface states (TSSs), which may pave the way for these materials to have a great potential in multiple applications. However, to enable consideration of TIs as building blocks for novel devices, stability of TSSs towards oxidation should be tested. Among the family of TIs with tetradymite structure, Sb 2 Te 3 is of p-type and appears to be the least explored material since its TSS is unoccupied in the ground state, a property that allows the use of optical excitations to generate spin currents relevant for spintronics. Here, we report relatively fast surface oxidation of Sb 2 Te 3 under ambient conditions. We show that the clean surface reacts rapidly with molecular oxygen and slowly with water, and that humidity plays an important role at the stage of the oxide-layer growth. In humid air, we show that Sb 2 Te 3 oxidizes in a time scale of minutes to hours, and much faster than other tetradymite TIs. The high surface reactivity revealed by our experiments is of critical importance and must be taken into account for the production and exploitation of novel TI-based devices using Sb 2 Te 3 as working material. Our results provide a fundamental and comprehensive understanding of the universal trend underlying the chemical reactivity of TIs.2

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Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures

Cited by 100 publications

References 33 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Photon drag effect in(Bi1−xSbx)2Te3three-dimensional topological insulators

Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

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Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures

Cited by 100 publications

References 33 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Photon drag effect in(Bi1−xSbx)2Te3three-dimensional topological insulators

Rapid Surface Oxidation of Sb2Te3 as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators

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Product

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Rapid Surface Oxidation of Sb₂Te₃ as Indication for a Universal Trend in the Chemical Reactivity of Tetradymite Topological Insulators