Recent advances on dielectrics technology for SiC and GaN power devices

Roccaforte, Fabrizio; Fiorenza, Patrick; Greco, Giuseppe; Vivona, Marilena; Nigro, Raffaella Lo; Giannazzo, Filippo; Patti, Alfonso; Saggio, M.

doi:10.1016/j.apsusc.2014.01.063

Cited by 144 publications

(53 citation statements)

References 99 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These wide band-gap semiconductor devices, such as SiC power devices, provide great opportunities to develop power electronic systems with increased power densities, high reliability in extreme environments and higher integration density [1][2][3][4][5]. However, one big challenge is how to solve assembly and materials problems coupled with packaging of SiC devices.…”

Section: Introductionmentioning

confidence: 99%

Rapid formation of intermetallic joints through ultrasonic-assisted die bonding with Sn–0.7Cu solder for high temperature packaging application

Qiao

2016

Scripta Materialia

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Rapid formation of intermetallic joints through ultrasonic-assisted die bonding with Sn–0.7Cu solder for high temperature packaging application

Qiao

2016

Scripta Materialia

View full text Add to dashboard Cite

“…GaN technology based HEMT devices operating at 200 − 600 V are already commercially available. However, GaN HEMTs still have not reached its full potential with remaining unresolved fundamental questions needed to be addressed in research community [25][26][27][28].…”

Section: Algan/gan High Electron Mobility Transistor Structuresmentioning

confidence: 99%

“…Surface donor-like states in the AlGaN are generally believed to be source of electrons [28]. [32,33].…”

Section: Algan/gan High Electron Mobility Transistor Structuresmentioning

confidence: 99%

Study of novel electronic materials by mid-infrared and terahertz optical Hall effect

Armakavicius¹

2017

View full text Add to dashboard Cite

Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. In particular, for the growing field of high frequency and high power electronics, Si cannot offer the required properties. Development of materials capable of providing high current densities, carrier mobilities and high breakdown fields is crucial for a progress in state of the art electronics. Epitaxial graphene grown on semi-insulating silicon carbide substrates has a high potential to be integrated in the current planar device technologies. High electron mobilities and sheet carrier densities make graphene extremely attractive for high frequency analog applications. One of the remaining challenges is the interaction of epitaxial graphene with the substrate. Typically, much lower free charge carrier mobilities, compared to free standing graphene, and doping, due to charge transfer from the substrate, is reported. Thus, a good understanding of the intrinsic free charge carriers properties and the factors affecting them is very important for further development of epitaxial graphene. III-group nitrides have been extensively studied and already have proven their high efficiency as light sources for short wavelengths. High carrier mobilities and breakdown electric fields were demonstrated for III-group nitrides, making them attractive for high frequency and high power applications. Currently, In-rich InGaN alloys and AlGaN/GaN high electron mobility structures are of high interest for the research community due to open fundamental questions. Electrical characterization techniques, commonly used for the determination of free charge carrier properties, require good ohmic and Schottky contacts, which in certain cases can be difficult to achieve. Access to electrical properties of buried conductive channels in multilayered structures requires modification of samples and good knowledge of the electrical properties of all electrical contact within the structure. Moreover, the use of electrical contacts to electrically characterize two-dimensional electronic materials, such as graphene, can alter their intrinsic properties. Furthermore, the determination of effective mass parameters commonly employs cyclotron resonance and Shubnikov-de Haas oscillations measurements, which require long scattering times of free charge carriers, high magnetic fields and low temperatures. The optical Hall effect is an external magnetic field induced optical anisotropy in conductive layers due to the motion of the free charge carriers under the influence of the Lorentz force, and is equivalent to the electrical Hall effect at optical frequencies. The optical Hall effect can be measured by generalized ellipsometry and provides a powerful method for the determination of free charge carrier properties in a non-destructive and contactless manner. In principle, a single optical Hall effect measurement can provide quan...

show abstract

“…There are various reports evaluating the properties of dielectrics for GaN, some reported the interface state density between GaN and SiO 2 is 3 orders higher than GaN and SiNx [34], while others reported converse. Since, GaN do not have native oxide; despite of uncertainty in the dielectric layer, SiN x and SiO 2 are prevalently used to passivate the surface.…”

Section: Resultsmentioning

confidence: 99%

“…However, most of them seem to have performance lower than the theoretical maximum due to various factors such as quality of the GaN films, device design [33], fabrication process and others [34].…”

Section: Motivationmentioning

confidence: 99%

Vertical gallium nitride schottky diodes for power switching applications.

Kolli¹

View full text Add to dashboard Cite

Recent advances on dielectrics technology for SiC and GaN power devices

Cited by 144 publications

References 99 publications

Rapid formation of intermetallic joints through ultrasonic-assisted die bonding with Sn–0.7Cu solder for high temperature packaging application

Rapid formation of intermetallic joints through ultrasonic-assisted die bonding with Sn–0.7Cu solder for high temperature packaging application

Study of novel electronic materials by mid-infrared and terahertz optical Hall effect

Vertical gallium nitride schottky diodes for power switching applications.

Contact Info

Product

Resources

About