Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation

Islam, Ahmad E.; Kufluoglu, H.; Varghese, D.; Mahapatra, S.; Alam, Muhammad Ashraful

doi:10.1109/ted.2007.902883

Cited by 251 publications

(188 citation statements)

References 52 publications

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“…Historically, both the trapping of holes in oxide defects and the creation of interface states have been suspected to be the cause of the degradation [1]. A logarithmic time dependence in the degradation of the threshold voltage is often considered the characteristic signature of a hole trapping contribution [2][3][4]. Conventionally, this hole trapping has been analyzed using elastic tunneling theory which predicts it to be temperatureindependent [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…A logarithmic time dependence in the degradation of the threshold voltage is often considered the characteristic signature of a hole trapping contribution [2][3][4]. Conventionally, this hole trapping has been analyzed using elastic tunneling theory which predicts it to be temperatureindependent [2][3][4]. However, recent results clearly indicate that the hole trapping component contributing to NBTI is thermally activated, which is incompatible with elastic tunneling [5].…”

Section: Introductionmentioning

confidence: 99%

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On the thermal activation of negative bias temperature instability

Southwick

Knowlton

Kaczer

2009

2009 IEEE International Integrated Reliability Workshop Final Report

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The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO 2 devices from temperatures ranging from 300K down to 6K with a measurement window of ~12ms to 100s. Results indicate that classic NBTI degradation is observed down to ~200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with time, which is opposite to the "classical" NBTI phenomenon.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

On the thermal activation of negative bias temperature instability

Southwick

Knowlton

Kaczer

2009

2009 IEEE International Integrated Reliability Workshop Final Report

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“…We clearly see that C-V of conventional Si device is shifted towards the left by a value ~36mV. [9], [10], [13]. It is to be noted that extracted n is independent of stress V G , which suggests absence of bulk trap generation [16] in the range of stress bias used for this study.…”

Section: Resultsmentioning

confidence: 59%

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Deora¹,

Paul²,

Bijesh³

et al. 2011

IEEE Electron Device Lett.

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Abstract-In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility (µ h ) in the transport direction and alleviates charge flow towards the gate oxide. µ h enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height (φ) in SiGe. Similar field acceleration factor (Γ) for threshold voltage shift (ΔV T ) and increase in noise (ΔS VG ) in Si and SiGe suggests identical degradation mechanisms.Index Terms-Gate leakage, p-MOSFET, negative bias temperature instability (NBTI), SiGe, Tight-Binding.

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“…The variation of Ey and Ex along the channel are shown in Figure.8 and Figure. 9 under positive bias stress and HC stress.The peak in the y component of electric field in the source channel junction leading to the fact that P+ doping of source which gives rise to more negative V FB in the source gate overlapping region compared to channel gate region [16]- [18]. Ex peak is also in the source channel junction.…”

Section: Resultsmentioning

confidence: 99%