Reconditioning-Free Polishing for Interlayer-Dielectric Planarization

Abstract

The contributions of 'shadow poles' to the nonrelativistic S-wave scattering by the exponential and the Hulthen potentials are calculated and the implications of these results in the theory based on 'shadow poles' in particle physics are discussed.

Effect of process parameters on material removal rate in chemical mechanical polishing of Si(100)

“…It has been attributed to deformation and smoothing of the pad surface, which could be caused by shear and stress during polishing [22] or interaction with the slurry [23]. This would decrease the padÕs ability to distribute slurry as well as increasing the pad-wafer direct contact area and, therefore, decreasing the effective pressure at the pad-wafer interface for a constant applied pressure [23,24]. At a low effective pressure, the particles could roll in the interface instead of plow and remove mate- rial from the wafer surface.…”

Study on the removal rate stability of CMP for ULSI silicon substrate

“…The number of effective abrasive particles is the key influence factor on removal rate [4] , which leads to the decreasing of removal rate, reaction rate and pH value below 10. Additionally, after long time polishing the pad is easy to be enamelled and decrease the abrasiveness, the removal rate is decreasing as a result [5] . Therefore, the removal rate is decreasing quickly at the forth stage.…”

Mn2O3 Slurry Achieving Reduction of Slurry Waste

“…[8][9][10] However, a solution with a high pH reacts with the pad surface during polishing and reduces the removal rate, which requires pad conditioning. [11][12][13] Furthermore, silica is ionized to (HO) 3 SiO À above pH 9, and to (HO) 2 SiO 2 2À at still higher pH values. 14) Silica abrasive therefore appears to be unable to offer a high removal rate and polishing without pad conditioning.…”

“…We first discovered that MnO 2 slurry polishes SiO 2 film, 11,12,24) and then that Mn 2 O 3 slurry polishes SiO 2 film much faster than conventional fumed silica slurry. 25,26) The removal rate of Mn 2 O 3 is 4 times that of conventional fumed silica slurry, and Mn 2 O 3 slurry is easy to remanufacture from used slurry.…”