Reducing MOSFET 1/f noise and power consumption by switched biasing

Klumperink, Eric A.M.; Gierkink, S.L.J.; Wel, A.P. van der; Nauta, Bram

doi:10.1109/4.848208

Cited by 228 publications

(118 citation statements)

References 19 publications

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“…Dynamically switching the bias of MOS devices will reduce their flicker noise, as also demonstrated in [3]. It also lessens the DC component of their effective impulse sensitivity function.…”

Section: Switching Current Source Oscillatormentioning

confidence: 85%

A 0.5V 0.5mW switching current source oscillator

Babaie

Shahmohammadi

Staszewski

2015

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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Section: Switching Current Source Oscillatormentioning

confidence: 85%

A 0.5V 0.5mW switching current source oscillator

Babaie

Shahmohammadi

Staszewski

2015

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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“…The PSD of an RTS is given by (5); the same holds for the effective stationary RTS, the time constants of which were are given by (9).…”

Section: E Generalisation To Trap Distributionmentioning

confidence: 99%

Low-Frequency Noise Phenomena in Switched MOSFETs

Wel

Klumperink

Kolhatkar

et al. 2007

IEEE J. Solid-State Circuits

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Abstract-In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, we review the limitations of current compact noise models which do not model such single-electron effects. We present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley-Read-Hall statistics to explain the behavior. Finally, we treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied.Index Terms-CMOS, flicker noise, large-signal excitation, lowfrequency noise, low-noise circuit design, MOSFET, noise reduction, RTS noise, switched biasing, 1 noise.

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“…The switched biasing technique (Figure 2) reduces the 1/ noise of a MOS transistor by cyclically increasing and decreasing its gate bias so that the device alternates between strong inversion and accumulation [22]. The transistor noise is modulated by the switching signal.…”

Section: Clock-based Techniques the Noise In Cmos Transistorsmentioning

confidence: 99%

Advances in Microelectronics for Implantable Medical Devices

Demosthenous

2014

Advances in Electronics

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Implantable medical devices provide therapy to treat numerous health conditions as well as monitoring and diagnosis. Over the years, the development of these devices has seen remarkable progress thanks to tremendous advances in microelectronics, electrode technology, packaging and signal processing techniques. Many of today's implantable devices use wireless technology to supply power and provide communication. There are many challenges when creating an implantable device. Issues such as reliable and fast bidirectional data communication, efficient power delivery to the implantable circuits, low noise and low power for the recording part of the system, and delivery of safe stimulation to avoid tissue and electrode damage are some of the challenges faced by the microelectronics circuit designer. This paper provides a review of advances in microelectronics over the last decade or so for implantable medical devices and systems. The focus is on neural recording and stimulation circuits suitable for fabrication in modern silicon process technologies and biotelemetry methods for power and data transfer, with particular emphasis on methods employing radio frequency inductive coupling. The paper concludes by highlighting some of the issues that will drive future research in the field.

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Reducing MOSFET 1/f noise and power consumption by switched biasing

Cited by 228 publications

References 19 publications

A 0.5V 0.5mW switching current source oscillator

A 0.5V 0.5mW switching current source oscillator

Low-Frequency Noise Phenomena in Switched MOSFETs

Advances in Microelectronics for Implantable Medical Devices

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