Regioregular Narrow‐Bandgap n‐Type Polymers with High Electron Mobility Enabling Highly Efficient All‐Polymer Solar Cells

Sun, Huiliang; Liu, Bin; Ma, Yunlong; Lee, Jin Woo; Yang, Jie; Wang, Junwei; Li, Yongchun; Li, Bangbang; Feng, Kui; Shi, Yongqiang; Zhang, Baohua; Han, Dongxue; Meng, Hong; Niu, Li; Kim, Bumjoon J.; Zheng, Qingdong; Guo, Xugang

doi:10.1002/adma.202102635

Cited by 168 publications

(84 citation statements)

References 57 publications

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“…To our delight, all polymers exhibited better device stability than PBTI attributed to their greatly suppressed LUMOs (−3.63 to −4.11 eV) versus that (−3.48 eV) of PBTI. 43 PCNDTI with the deepest LUMO (−4.11 eV) showed the highest OTFT stability, retaining 60% of its initial mobility after 360 h of storage under ambient conditions, which is superior to that of most n-type polymers in the literature, 44 demonstrating the power of cyano functionalization for lowering FMOs. The deep-lying LUMOs of these polymers should be advantageous for n-doping.…”

Section: Cyano-functionalized Bti-based Semiconductors and Their Devi...mentioning

confidence: 86%

“…It should be pointed out that these polymers suffer from limited absorption at long wavelengths, which severely restrains J sc in all-PSCs. Inspired by the great success of the polymerization strategy of fused-ring electron acceptors (FREAs) and the synthesis of BTI-Tin, we developed A–A copolymer L15 (Figure ), , which can synergistically combine the excellent light absorption of FREAs and the advantages of BTI to enable a polymer acceptor with broad absorption, good solubility, and a promising electron-transport property. When mingled with PM6, L15-based all-PSCs delivered a high PCE of 15.2% with a remarkable J sc of 22.2 mA cm –2 , which is among the highest values for all-PSCs.…”

Section: Semiconductors Based On Fluorinated Bti Derivativesmentioning

confidence: 99%

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n-Type Organic and Polymeric Semiconductors Based on Bithiophene Imide Derivatives

et al. 2021

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Metrics & MoreArticle Recommendations CONSPECTUS: In the last three decades, p-type (hole-transporting) organic and polymeric semiconductors have achieved great success in terms of materials diversity and device performance, while the development of n-type (electron-transporting) analogues greatly lags behind, which is limited by the scarcity of highly electron-deficient building blocks with compact geometry and good solubility. However, such n-type semiconductors are essential due to the existence of the p−n junction and a complementary metal oxide semiconductor (CMOS)-like circuit in organic electronic devices. Among various electron-deficient building blocks, imide-functionalized arenes, such as naphthalene diimide (NDI) and perylene diimide (PDI), have been proven to be the most promising ones for developing n-type organic and polymeric semiconductors. Nevertheless, phenyl-based NDI and PDI lead to sizable steric hindrance with neighboring (hetero)arenes and a high degree of backbone distortion in the resultant semiconductors, which greatly limits their microstructural ordering and charge transport. To attenuate the steric hindrance associated with NDI and PDI, a novel imidefunctionalized heteroarene, bithiophene imide (BTI), was designed; however, the BTI-based semiconductors suffer from high-lying frontier molecular orbital (FMO) energy levels as a result of their electron-rich thiophene framework and monoimide group, which is detrimental to n-type performance.In this Account, we review a series of BTI derivatives developed via various strategies, including ring fusion, thiazole substitution, fluorination, cyanation, and chalcogen substitution, and elaborate the synthesis routes designed to overcome the synthesis challenges due to their high electron deficiency. After structural optimization, these BTI derivatives can not only retain the advantages of good solubility, a planar backbone, and small steric hindrance inherited from BTI but also have greatly suppressed FMO levels. These novel building blocks enable the construction of a great number of n-type organic and polymeric semiconductors, particularly acceptor−acceptor (or all-acceptor)-type polymers, with remarkable performance in various devices, including electron mobility (μ e ) of 3.71 cm 2 V −1 s −1 in organic thin-film transistors (OTFTs), a power conversion efficiency (PCE) of 15.2% in all-polymer solar cells (all-PSCs), a PCE of 20.8% in inverted perovskite solar cells (PVSCs), electrical conductivity (σ) of 0.34 S cm −1 and a power factor (PF) of 1.52 μW m −1 K −2 in self-doped diradicals, and σ of 23.3 S cm −1 and a PF of ∼10 μW m −1 K −2 in molecularly n-doped polymers, all of which are among the best values in each type of device. The structure−property−device performance correlations of these n-type semiconductors are elucidated. The design strategy and synthesis of these novel BTI derivatives provide important information for developing highly electron-deficient building blocks with optimized physicochemical properties. Finally, we offer o...

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Section: Cyano-functionalized Bti-based Semiconductors and Their Devi...mentioning

confidence: 86%

Section: Semiconductors Based On Fluorinated Bti Derivativesmentioning

confidence: 99%

n-Type Organic and Polymeric Semiconductors Based on Bithiophene Imide Derivatives

et al. 2021

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“…(c) Linkage unit modulation . As reported, introducing an acceptor moiety as a linkage unit to form A‐A‐type PSMAs provides the additional electron channels for securing high electron mobility 20,29 . This design strategy offers new opportunities to deeply investigate the effect of suitable linkage units (D/A) on charge dynamics.…”

Section: Design Of Psmasmentioning

confidence: 95%

“…As reported, introducing an acceptor moiety as a linkage unit to form A-A-type PSMAs provides the additional electron channels for securing high electron mobility. 20,29 This design strategy offers new opportunities to deeply investigate the effect of suitable linkage units (D/A) on charge dynamics. In addition, our recent works also provide the valuable information on how halogenation of the linkage unit in PSMAs could effectively regulate the solid-state crystallinity and blend morphology, thus improving electron mobility and performance.…”

Section: Regiorandom Psmas System Regioregular Psmas System Pbdb-t:pz...mentioning

confidence: 99%

Polymerizing small molecular acceptors for efficient all‐polymer solar cells

Kong

Yuan

et al. 2022

InfoMat

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All-polymer solar cells (all-PSCs) have received attention due to their morphological stability under thermal and mechanical stresses. Currently, the highest reported power conversion efficiency of all-PSCs is over 17%, achieved by utilizing polymerized small molecular acceptors (PSMAs). However, the need for higher regiospecificity to avoid forming isomers during polymerization of SMAs still challenges the further applications of all-PSCs. From this perspec-

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“…Organic solar cells (OSCs) have been considered as emerging technologies for the next generation of photovoltaic devices with the advantages of low‐cost manufacturing on lightweight flexible substrates by solution fabrication methods. [ 1–5 ] Benefitting from the great progress in organic photoactive layer materials, the power conversion efficiency (PCE) has exceeded 15%, indicating a bright future for the practical applications of OSCs. [ 6–10 ] In OSCs, the electrode interlayer between the photoactive layer and electrode plays a crucial role in enhancing the PCEs by facilitating charge collection.…”

Section: Introductionmentioning

confidence: 99%

Exploring Inorganic Hole Collection Materials from Mixed‐Metal Dawson‐Type Polyoxometalates for Efficient Organic Photovoltaic Devices

Fang

Zhang

et al. 2021

Solar RRL

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Interfacial layer materials play an important role in performance enhancement of organic solar cells (OSCs). Herein, the utilization of mixed‐metal Dawson‐type polyoxometalates, namely P2Mo3W15O62 (POM‐1) and P2Mo9W9O62 (POM‐2), as anode interlayer (AIL) materials, for efficiently collecting holes to boost the photovoltaic efficiency of OSCs, is explored. The increase in molybdenum substitution in the mixed‐metal POMs can lower the conduction band level and increase the reduction potential. Meanwhile, the high work function of POMs helps to remove the energy barrier in the hole collection, which solves the serious problem of Voc loss in OSCs. As a result, OSCs modified by POM‐2 can exhibit superior photovoltaic performance with power conversion efficiency of 14.8%. The results of Mott−Schottky analysis, current density−light intensity dependence, and excitons dissociation probability indicate the efficient hole collection and the depressed charge recombination in the POM‐2‐based OSC device. By means of fabricating OSCs, the effect of the two POM‐based AILs on various photoactive layers is also investigated, and POM‐2 exhibits excellent hole collection capability. Moreover, the advantages of low‐cost and solution‐processable conduct make POM‐2 a promising candidate as the AIL material for future mass production of OSCs.

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Regioregular Narrow‐Bandgap n‐Type Polymers with High Electron Mobility Enabling Highly Efficient All‐Polymer Solar Cells

Cited by 168 publications

References 57 publications

n-Type Organic and Polymeric Semiconductors Based on Bithiophene Imide Derivatives

n-Type Organic and Polymeric Semiconductors Based on Bithiophene Imide Derivatives

Polymerizing small molecular acceptors for efficient all‐polymer solar cells

Exploring Inorganic Hole Collection Materials from Mixed‐Metal Dawson‐Type Polyoxometalates for Efficient Organic Photovoltaic Devices

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