Reliability Improvement of 28-nm High-$k$/Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing

Yang, Yi-Lin; Zhang, Wenqi; Cheng, Chi-Yun; Huang, Yixiao; Chen, Pin-Tseng; Hsu, Chia‐Wei; Chin, Li-Kong; Lin, Cheng-Li; Hsu, Che-Hua; Lai, Chun‐Mei; Yeh, Wen-Kuan

doi:10.1109/led.2012.2202089

Cited by 22 publications

(11 citation statements)

References 9 publications

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“…The extent of the reduction compared to the as-grown stacks increases with the increase of the electric field and at ±10 V it is larger than 1 order of magnitude. A similar improvement of the leakage currents by oxygen annealing of the HfO 2 -based stacks is also observed in [ 41 , 42 ]. The N 2 annealing effect on J is more unclear.…”

Section: Resultssupporting

confidence: 80%

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

et al. 2021

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High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.

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Section: Resultssupporting

confidence: 80%

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

et al. 2021

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“…But in turn, it comes with the limitation of low drain current and mobility degradation due to the critical issues related with high-k. The significant effects of high-k dielectric material which obstruct its employment in MOSFET over Poly-Si layer are Fermi Level Pinning, Phonon Scattering, Poly Depletion and Poor Reliability [13][14][15].…”

Section: Performance Evaluation By High-k Materialsmentioning

confidence: 99%

Simulated Analysis of Double-Gate MOSFET and FinFET Structure Using High-k Materials

Srivastava

Bose

2021

Communications in Computer and Information Science

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In this paper, the concept of non-conventional transistors has been presented. Both Double-Gate MOSFET and FinFET have tremendous potential for reducing short-channel effects and high leakage current. With the advancement in the nanometer technology, chip density and operating frequency is increasing leading to the more and more power consumption of battery operated portable devices. Hence, to meet all these challenges including scaling, Double-Gate MOSFET and FinFET are the promising substitutes for the bulk CMOS structures. The devices have been developed and are compared to conventional MOSFET structures which provide wider benefits.

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“…The thickness control for IL is very fundamental. In addition, employing gate-last (GL) [29][30][31] process can avoid the higher source/drain annealing temperature causing molten metal gate and harming process integration. Utilizing stacked HfO x / ZrO y /HfO x (HZH) gate dielectric with atomic layer deposition (ALD) [32,33] method appears an agreeable method to support a sufficient relative dielectric constant.…”

Section: Preparation Of Mosfet Devicesmentioning

confidence: 99%

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

Lee

Wang

et al. 2015

Microelectronic Engineering

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Reliability Improvement of 28-nm High-$k$/Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing

Cited by 22 publications

References 9 publications

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

Simulated Analysis of Double-Gate MOSFET and FinFET Structure Using High-k Materials

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

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