Research of bipolar amplification effect in single event transient

Abstract

Using 3-D mixed-mode simulation, bipolar amplification effect in an inverter chain of single event transient(SET) is studied, and compared with that in single NMOS. It is found that bipolar amplification component takes a large proportion in SET current pulse, but not in an inverter chain. The difference of source/substrate biases between them and the mechanism of amplification are explained, which validates the conclusion that bipolar amplification depends on the bias of source/substrate. The positive current component from source to drain and the mechanism of SET pulse are also studied, and results show that the source current change is positive in the plateau region because of the presence of carrier diffusion.

Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation

“…The negative current in source electrode after 1 ns indicates that the source injects electrons into the channel due to the fact that the residual holes left in the substrate raise the substrate potential and lower the source junction potential barrier, these injected electrons can be amplified and collected by the drain electrode. [14,15] For a better view of the current in different electrodes, the substrate current is defined as having a negative value here. When the source junction is removed, the substrate current shows a considerable increase.…”

The dual role of multiple-transistor charge sharing collection in single-event transients

“…Due to the good look-inside capability, three-dimensional mixed-mode technology computer aided design (TCAD) simulation has been proven to be a useful means of investigating the mechanism of single event charge collection. [9][10][11][12][13] In the simulation, the SET will be produced and propagate in a nine-inverter chain, as shown in Fig. 1(a).…”

New insight into the parasitic bipolar amplification effect in single event transient production

“…Due to its good look-inside capability, threedimensional mixed-mode technology computer aided design (TCAD) simulation has been proven to be a useful means for investigating the mechanism of single event charge collection. [6,7,10,11] In this paper, the SET production processes in a two-transistor (2T) in-verter and a three-transistor (3T) inverter are simulated. The struck pMOSFET or nMOSFET transistor is simulated as a three-dimensional (3D) numerical model, and the other transistors are simulated as corresponding circuit models.…”