Residual stress development in Pb(Zr,Ti)O3/ZrO2/SiO2 stacks for piezoelectric microactuators

Hong, Eunki; Smith, Rob; Krishnaswamy, S. V.; Freidhoff, C. B.; Trolier-McKinstry, Susan

doi:10.1016/j.tsf.2005.12.300

Cited by 44 publications

(36 citation statements)

References 22 publications

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“…As dielectric buffer layer, most of the research groups have used zirconia (ZrO 2 ) barrier layers to grow PZT on oxidized silicon. This is very efficient in preventing lead diffusion, but does not promote texturing of PZT [11,[14][15][16][17][18][19]. We found that evaporated magnesia (MgO) thin films worked well as dielectric buffer layers promoting {1 0 0} growth.…”

Section: P Ementioning

confidence: 99%

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

Chidambaram

Balma

Nigon

et al. 2015

J. Micromech. Microeng.

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The use of interdigitated electrodes (IDEs) in conjunction with ferroelectric thin films shows many attractive features for piezoelectric MEMS applications. In this work, growth of {1 0 0}-textured lead zirconate titanate (PZT) thin films was achieved on insulating MgO buffered, oxidized silicon substrates. IDEs were fabricated by lift-off techniques and cantilevers were formed by dicing. The deflection upon application of a sweeping voltage was measured as large signal response in parallel to the ferroelectric polarization (PV loop). Likewise, the small signal piezoelectric response was measured in parallel to the capacitance-voltage (CV) measurement. In this way, a complete picture of the ferroelectric–piezoelectric element was obtained. From the deflection, the in-plane piezoelectric stress in the PZT thin film was derived and, from this, the effective piezoelectric coefficients. For the latter, two types were defined: an engineering type corresponding to the average value along the IDE, which can directly be compared to coefficient of a parallel plate electrode (PPE) capacitor and a second one that approximately yields the idealized coefficient governing between the electrode fingers. The IDE structures were experimentally compared with PPE structures of identical film thickness. The resulting coefficients were of opposite sign, as expected. In spite of a much better polarization loop, the IDE device showed a lower average piezoelectric stress. The estimated peak value between the fingers was about the same as in the PPE device, corresponding to about 20 C m−2. Nevertheless, the result is very promising for cases where compressive piezoelectric stresses are required and for preventing cracking due to large piezoelectric tensile stresses in PPE systems.

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Section: P Ementioning

confidence: 99%

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

Chidambaram

Balma

Nigon

et al. 2015

J. Micromech. Microeng.

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“…The research activities regarding the residual stress characterization in PZT films and the influence of the stress on the electrical properties rapidly increased in the last few years. Although much work has focused on residual stress in CSD PZT films, 28,29 the understanding of the stress development that leads to residual stress is intermittent, particularly in the transition of the wet films to the crystallization. Further, to identify and design a stress-free device structure, it is important to identify the contribution of all layers to the total stress.…”

Section: Introductionmentioning

confidence: 99%

Development of residual stress in sol-gel derived Pb(Zr,Ti)O3 films: An experimental study

Corkovic

Whatmore

Zhang

2008

Journal of Applied Physics

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Access to the full text of the published version may require a subscription. Residual stresses develop in the sol-gel-derived ferroelectric thin films during the transformation of the metal-organic gel to the metal oxide upon thermal treatment and due to the thermal and elastic mismatch between the Pb͑Zr x ,Ti 1−x ͒O 3 ͑PZT͒ film and the substrate materials during cooling. In this study, residual stresses were determined using the wafer curvature method after the deposition of multilayer PZT film on platinized ͑100͒ silicon wafers. A multilayer model for stress analysis was used to calculate the residual stress in PZT films of three different compositions: x = 0.4, x = 0.52, and x = 0.6. Orientation dependent residual stresses were found in compositions containing the tetragonal phase, with x = 0.4 and x = 0.52. Depending on the fraction of ͑100͒ orientated domains low compressive or low tensile stress was found in Pb͑Zr 0.4 Ti 0.6 ͒O 3 ͑PZT 40/ 60͒. Higher residual stress was found in PZT films consisting of only rhombohedral crystallographic structure ͑PZT 60/ 40͒ while the residual stress in PZT films with morphotropic boundary composition ͑PZT 52/ 48͒ was significantly dependent on the film orientation and the phase composition and could range from 17 to 90 MPa. The effect of the film orientation on residual stress was found to be a function of the anisotropic thermal expansion coefficient of PZT. The contribution of the thermal and elastic properties of materials to the total wafer curvature was investigated and discussed. Finally, the residual stress results calculated with the four layer model were compared to the results calculated using the Stoney equation. Rights

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“…5. Stress relaxation in PZT can be explained by either structural changes or adsorption of moisture into the compound of PZT through the grain boundaries [7].…”

Section: Mathematical Modeling For Experiments Resultsmentioning

confidence: 99%

Investigation of Relations between Atomic Number and Composition Weight Ratio in PZT and SMA and Prediction of Mechanical Behavior

Monfared

Khalili

2011

Acta Phys. Pol. A

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In this paper there is presented the mechanical behavior of the one lead-zirconate-titanate by its atomic number and its certain mechanical behavior is simulated by the mathematical modeling and ABAQUS software for smart materials, as well as prediction of mechanical behaviors. Also in this smart material (Pb-Zr-Ti) the grain size according to molar ratio is studied. This mechanical behavior is modeled by the exponential and polynomial formula from one to ten degree. Next there are defined the new relations for mechanical behavior and composition weight ratio, between composed elements for triplex lead-zirconate-titanate and dual smart materials. Triplex lead-zirconate-titanate has been selected as main and important material for the development of smart structures. In addition, the relation between atomic number and weight ratio in one smart material (Ni-Ti) is investigated briefly. In this work, change of resistance and voltage, pressure, grain size, molar ratio, residual stress, content of zirconate and the other mechanical properties are studied.

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Residual stress development in Pb(Zr,Ti)O3/ZrO2/SiO2 stacks for piezoelectric microactuators

Cited by 44 publications

References 22 publications

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode

Development of residual stress in sol-gel derived Pb(Zr,Ti)O3 films: An experimental study

Investigation of Relations between Atomic Number and Composition Weight Ratio in PZT and SMA and Prediction of Mechanical Behavior

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