Residual Stress State of Brazed Ceramic/Metal Compounds, Determined by Analytical Methods and X‐ray Residual Stress Measurements

Iancu, Otto Theodor; Münz, D.; Eigenmann, Bernd; Scholtes, Berthold; Macherauch, Eckard

doi:10.1111/j.1151-2916.1990.tb05170.x

Cited by 53 publications

(25 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A low value of the parameter (CTE × E × thickness) is necessary in order to obtain a low averaged coefficient of thermal expansion of the whole structure (skins, adhesive and honeycomb). 11 For the selection of a bonding technology it has been calculated 12 that the maximum allowable value for the product CTE × E × thickness should be 120 × 10 −6 • C −1 GPa mm. For TiCuNi brazing layer both CTE and E are high, leading to a CTE × E × thickness product between 292 and 584 × 10 −6 • C −1 GPa mm (depending on the joint thickness), so the impact of thermo-elastic mismatch between the joint and the C/C would be quite important; according to these results and considering the temperature of the joining process (much higher than 300 • C), the TiCuNi brazing process has not been considered as the most suitable solution for ultra stable structures.…”

Section: Ticuni Brazing Alloymentioning

confidence: 99%

Study of joining of carbon/carbon composites for ultra stable structures

Salvo

Casalegno

Vitupier

et al. 2010

Journal of the European Ceramic Society

View full text Add to dashboard Cite

Section: Ticuni Brazing Alloymentioning

confidence: 99%

Study of joining of carbon/carbon composites for ultra stable structures

Salvo

Casalegno

Vitupier

et al. 2010

Journal of the European Ceramic Society

View full text Add to dashboard Cite

“…Many of them, e.g. X-ray diffraction (Iancu et al 1990), neutron diffraction (Wang et al 1994) and Raman spectroscopy (Benrakkad et al 1995) measure directly the lattice parameters and hence effectively the strain resulting from lattice deformation. In this report, both a X-ray diffraction and an optical analysis method were employed to measure the radius of curvature of both the uncoated and coated substrates.…”

Section: Introductionmentioning

confidence: 99%

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

2011

View full text Add to dashboard Cite

In this work, we analyze the influence of the processing pressure and the substrate-target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AIN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvaturean optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target-substrate distance as it was varied in between 30 and 70 mm.

show abstract

“…The residual stresses in the films were calculated from the parabolic shapes of the films. The stress distribution in each layer was obtained using Hooke's law [17] as…”

Section: Modeling and Calculation Of Residual Stressesmentioning

confidence: 99%

Stress-Induced Phase Formation of PZT 52/48 Thin Films

Zhang

Cordova

Marshall

et al. 2007

Integrated Ferroelectrics

View full text Add to dashboard Cite

In this work, tetragonal and rhombohedral phases in PZT 52/48 thin films were identified using XRD. The relative intensities of these phases were calculated. The presence of the rhombohedral phase may have implications for the piezoelectric properties, since the polar axis in rhombohedral crystals lies along the (111) body diagonal rather than the (001) axis for tetragonal crystals.The effects of stress on phase co-existence at the morphotropic phase boundary were also investigated. Two PZT52/48 films were grown under the compressive stresses of different magnitudes. For the film grown under smaller compressive stress, twophase co-existence was observed, but the film grown under larger compressive stress was observed to be rhombohedral dominant. The piezoelectric coefficient, d 33,f of the rhombohedral dominant film was less than that of the mixed-phase film. It is possible that a (001)/(100) oriented film of slightly tetragonal composition (e.g. 48/52) could have higher piezoelectric coefficients than a mixed-phase MPB film.

show abstract

Residual Stress State of Brazed Ceramic/Metal Compounds, Determined by Analytical Methods and X‐ray Residual Stress Measurements

Cited by 53 publications

References 4 publications

Study of joining of carbon/carbon composites for ultra stable structures

Study of joining of carbon/carbon composites for ultra stable structures

Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films

Stress-Induced Phase Formation of PZT 52/48 Thin Films

Contact Info

Product

Resources

About