Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

Nardi, Federico; Larentis, Stefano; Balatti, Simone; Gilmer, D. C.; Ielmini, Daniele

doi:10.1109/ted.2012.2202319

Cited by 186 publications

(157 citation statements)

References 32 publications

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“…Moreover, the effect of the set current limitation on the reset current is also taken into account by this compact model ( Figure 5). It is interesting to note that this behavior appears for unipolar and bipolar memory [11]. However, in our study, only the bipolar structures will be studied.…”

Section: Model Validationmentioning

confidence: 79%

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Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Bocquet

Aziza

Zhao

et al. 2014

JLPEA

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Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level. J. Low PowerElectron. Appl. 2014, 4 2

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Section: Model Validationmentioning

confidence: 79%

“…Generally, the electroforming voltage is superior to these voltages. However, several groups have demonstrated forming-free structures by adjusting the stoichiometry of the active layer [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Bocquet

Aziza

Zhao

et al. 2014

JLPEA

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“…When a voltage is applied to the top electrode in order to set a cell in a high resistive state (HRS), oxygen ions migrate from the oxide to the electrode [3]. When the set voltage V set is reached, a conductive filament (CF) of oxygen vacancies is created.…”

Section: B Oxram Technology Descriptionmentioning

confidence: 99%

Thermal laser attack and high temperature heating on HfO<inf>2</inf>-based OxRAM cells

Krakovinsky

Bocquet

Wacquez³

et al. 2017

2017 IEEE 23rd International Symposium on on-Line Testing and Robust System Design (IOLTS)

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Abstract-The last 10 years have seen the rise of new NVM technologies as alternative solutions to Flash technology, which is facing downsizing issues. Apart from offering higher performance than the state of the art of Flash, one of their key features is lower power consumption, which makes them even more suitable for the IoT era. But one of the other main concerns regarding IoT is data security, which is yet to be evaluated for emerging NVM. Our previous work aimed at putting under test the integrity of HfO 2 based resistive RAM (OxRAM cells). Bit-set occurrences were found after thermal laser attacks. This present work investigates the difference in behaviour when a selector is added to the resistive element, thanks to attack on different stacks. The results obtained give interesting tracks for the design of secure OxRAM-based ICs. It also studies the kinetic role of temperature through heating experiments.

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“…Dioxide, 4 Hafnium Oxide, 5 Nickel Oxide 6 , Tungsten Oxide 7 , chalcogenides 8 or oxide heterostructures.…”

Section: Introductionmentioning

confidence: 99%

On the origin of resistive switching volatility in Ni/TiO2/Ni stacks

Cortese

Trapatseli

Khiat

et al. 2016

Journal of Applied Physics

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Resistive switching (RS) and Resistive Random Access Memories (ReRAMs) that exploit it have attracted huge interests for next generation non volatile memory (NVM) applications, also thought to be able to overcome flash memories limitations when arranged in crossbar arrays. A cornerstone of their potential success is that the RS between two different resistive states, usually High (HRS, High resistive state) and Low(LRS, Low Resistive State) is an intrinsic non-volatile phenomenon with the two states thermodynamically stable. Titanium Dioxide is one of the most common materials known to show non-volatile RS. In this paper we report the first observed volatile resistive switching (VRS) in a Titanium Dioxide thin film. The aim of this paper is to study and understand the VRS phenomenon to give an extensive picture of its underlying Physics. A possible exploitation of the VRS could be in access devices in ReRAM crossbar arrays.

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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

Cited by 186 publications

References 32 publications

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Thermal laser attack and high temperature heating on HfO<inf>2</inf>-based OxRAM cells

On the origin of resistive switching volatility in Ni/TiO2/Ni stacks

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