Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu Se-based atomic switch

Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sung-Jong

doi:10.1016/j.jallcom.2018.04.179

Cited by 16 publications

(5 citation statements)

References 38 publications

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“…This is consistent with the values recorded for I À ions (0.1-0.6 eV), hence suggesting the movement of I À ions to be the dominant process that causes memristive switching in our devices. 72,73 Therefore, we attribute the switching mechanism predominantly to the conductive filament formation due to the migration of anion vacancies within the HP layer. We hypothesize that upon application of a positive set voltage at the top electrode, positively charged iodide vacancies drift towards the bottom electrode, forming highly conductive filaments shorting the device to its LRS.…”

Section: Resultsmentioning

confidence: 98%

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High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Vishwanath,

Febriansyah,

et al. 2024

Mater. Horiz.

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Section: Resultsmentioning

confidence: 98%

“…This is consistent with the values recorded for I − ions (0.1–0.6 eV), hence suggesting the movement of I − ions to be the dominant process that causes memristive switching in our devices. 72,73…”

Section: Resultsmentioning

confidence: 99%

High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Vishwanath,

Febriansyah,

et al. 2024

Mater. Horiz.

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“…To operate an ATS-FET at a high on-state current, the TS device must exhibit stable TS performance under high-compliance current conditions. Therefore, in this work, a Ti-injection barrier layer with low Ag ion diffusivity is inserted between the top electrode and the HfO 2 switching layer, to control Ag injection [24]- [26]. Generally, a TS device with the Ti-injection barrier layer of 3nm thickness (or thicker) causes an increase in V T [24].…”

Section: Effect Of Using ''Inserted'' Ti Layermentioning

confidence: 99%

“…Therefore, in this work, a Ti-injection barrier layer with low Ag ion diffusivity is inserted between the top electrode and the HfO 2 switching layer, to control Ag injection [24]- [26]. Generally, a TS device with the Ti-injection barrier layer of 3nm thickness (or thicker) causes an increase in V T [24]. In order to implement excellent switching characteristics (i.e., low V T condition), a TS device with a 3 nm-thick Ti-injection barrier layer was fabricated.…”

Section: Effect Of Using ''Inserted'' Ti Layermentioning

confidence: 99%

Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device

et al. 2021

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A two-dimension (2D) atomic-threshold-switching field-effect transistor (ATS-FET) was implemented, by connecting an AgTi/HfO 2 -based threshold-switching (TS) device in series to the drain electrode of the 2D baseline-FET with molybdenum disulfide (MoS 2 ) channel material. We optimized/developed the Ag/HfO 2 -based TS device because its characteristic is associated to the way how to achieve high performance of the 2D ATS-FET. By reducing the effective device area of the Ag/HfO 2 -based TS device down to 4 µm 2 , low threshold voltage (V T ∼ 0.42 V), low threshold current (I T , drain current at the threshold voltage, ∼3.79 × 10 −11 A), and low V T variation (∼0.09 V) were achieved. This is because the randomly formed filaments and electric field are better controlled with the scaled effective area. Next, the titanium (Ti)-injection barrier layer was inserted between the top electrode and the switching layer, while maintaining the optimized area in the TS device. The inserted Ti-injection barrier layer prevents the migration of Ag ions into the switching layer, enabling the stable TS operation even under the compliance current of 100 µA. Additionally, it locally restricts the region where the filaments are created inside the switching layer, resulting in a 17% lower V T variation and stable I T to approximately ∼1.5 × 10 −11 A in 100 cycles. Due to the low off-state leakage current and low variation characteristic of the optimized AgTi/HfO 2 -based TS device, the 2D ATS-FET (vs. 2D baseline-FET) shows the reduction of off-state leakage current (by ∼10 2 in sub-threshold region) and the stable switching characteristic. The proposed 2D ATS-FET shows stably steep switching characteristics, e.g., sub-threshold swing under forward bias (∼19 mV/decade) and reverse bias (∼26 mV/decade), because of its abruptly switching characteristics of the TS device.INDEX TERMS Atomic threshold switching, threshold switching device, 2D ATS-FET.

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“…Several reports have recommended that bilayer RS devices, such as those using AlO x /Al 2 O 3 , SiO x /TiO 2 , TaO x /Ta 2 O 5-x , and a Ti/HfO 2 layer, show better performance than single-layer RS devices [19][20][21][22]. Moreover, bilayer devices with a metal buffer layer have attracted more attention because of the formation of an interfacial oxide layer between the metal (Ti, Hf, Ta, etc) and RS layers, which is vital to the formation of a single CF at the oxygen vacancies in the RS layer [23,24].…”

Section: Introductionmentioning

confidence: 99%

Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu–Sn alloy-based conductive-bridge random access memory

2018

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The conductive-bridge random access memory (CBRAM) has become one of the most suitable candidates for non-volatile memory in next-generation information and communication technology. The resistive switching (RS) mechanism of CBRAM depends on the formation/annihilation of the conductive filament (CF) between the active metal electrode and the inert electrode. However, excessive ion injection from the active electrode into the solid electrolyte reduces the uniformity and reliability of the RS devices. To solve this problem, we investigated the RS characteristics of a CuSn alloy active electrode with different compositions of Cu-Sn (0.13 < X < 0.55). The RS characteristics were further improved by inserting a dysprosium (Dy) or lutetium (Lu) buffer layer at the interface of Cu-Sn/AlO. Electrical analysis of the optimal Cu-Sn/Lu-based CBRAM exhibited stable RS behavior with low operation voltage (SET: 0.7 V and RESET: -0.3 V), a high on state/off state resistive ratio (10), AC cyclic endurance (>10), and stable retention (85 °C/10 years). To achieve these performance parameters, CFs were locally formed inside the electrolyte using a modified CuSn active electrode, and the amount of Cu-ion injection was reduced by inserting the Dy or Lu buffer layer between the CuSn active electrode and the electrolyte. In particular, conductive-atomic force microscopy results at the Dy or Lu/AlO interface directly showed and defined the diameter of the CF.

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Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu Se-based atomic switch

Cited by 16 publications

References 38 publications

High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device

Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu–Sn alloy-based conductive-bridge random access memory

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