Resistive switching memory effect of ZrO2 films with Zr+ implanted

Liu, Qi; Guan, Weihua; Long, Shibing; Jia, Rui; Liu, Ming; Chen, Junning

doi:10.1063/1.2832660

Cited by 251 publications

(187 citation statements)

References 15 publications

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“…However, the I-V curves in the HRS are divided into three different linear regions for both devices: low-voltage region demonstrating Ohmic conduction having slope of 1, higher-voltage region with the slope of 2, and more drastically changing current region with slopes of more than 3 before soft breakdown occurs for set switching. The experimental results show good agreements with space-charge-limited current (SCLC) mechanism for both devices [16,17]. It is widely believed that the resistive switching behavior of RRAM devices with Ag TE with high diffusivity in electrolyte and inert BE is strongly related to the formation and dissolution of Ag-rich conducting filament [18,19].…”

Section: Introductionsupporting

confidence: 62%

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Kim¹,

Cho²,

Park³

2016

JSTS:Journal of Semiconductor Technology and Science

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Section: Introductionsupporting

confidence: 62%

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Kim¹,

Cho²,

Park³

2016

JSTS:Journal of Semiconductor Technology and Science

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“…The Ohmic conduction behavior (I ∝ V) is observed in low voltage region where V < 0.1 V, and followed by a quadratic term (I ∝ V 2 ) as defined by Child's Law in V > 0.1 V. The SCLC mechanism is also identified to be the dominant conduction mechanism in Au/Cr/Zr + -implanted-ZrO2/Si device as reported by Liu et al [44]. The fitting of each SCLC regions for both positive and negative voltage range are clearly shown SCLC behavior.…”

Section: Space Charge Limited Conduction (Sclc)mentioning

confidence: 49%

“…While CF evolution is typically associated with thermal, electrical or ion migration [19,20], there is no consensus on the dominant conduction mechanism in resistive switching memory devices [21][22][23]. Among the commonly observed conduction mechanisms are: (i) Poole-Frenkel emission [24][25][26][27][28][29][30][31][32]; (ii) Schottky emission [33][34][35][36][37][38][39][40][41][42]; (iii) SCLC [43][44][45][46][47][48][49][50][51][52][53] (iv) trap-assisted tunneling [54][55][56][57][58][59]; and (v) hopping conduction [60][61][62][63][64][65]. To enhance the device performance and data retention property, it is crucial to identifying t...…”

Section: Introductionmentioning

confidence: 99%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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“…As suggested by the name, memristors can be used for information storage [8][9][10][11][12][13][14]. Moreover, memristors can function as stateful Boolean logic gates via the material implication operation [15].…”

Section: Introductionmentioning

confidence: 99%

Metal/TiO2 interfaces for memristive switches

et al. 2011

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The interfaces between metal electrodes and the oxide in TiO 2 -based memristive switches play a key role in the switching as well as in the I -V characteristics of the devices in different resistance states. We demonstrate here that the work function of the metal electrode has a surprisingly minor effect in determining the electronic barrier at the interface. In contrast, Ti oxides can be readily reduced by most electrode metals. The amount of oxygen vacancies created by these chemical reactions essentially determines the electronic barrier at the device interfaces.The memristor, the fourth fundamental passive circuit element [1][2][3], has a wide variety of potential applications based on its promising device properties [1][2][3][4][5][6][7], including non-volatility, fast switching (<10 ns), low energy (∼1 pJ/operation), multiple-state operation, scalability and stackability. As suggested by the name, memristors can be used for information storage [8][9][10][11][12][13][14]. Moreover, memristors can function as stateful Boolean logic gates via the material implication operation [15]. In addition, memristors can also be used for neuromorphic computing [16,17] because of their analog switching, and some hybrid circuits due to their ease of stacking [18,19].Among all the kinds of switching materials that have been reported, oxides are the most extensively studied [4]. The interfaces between the metal electrodes and the oxide play a crucial role, especially for bipolar switches [5,6,20]. Under an applied electric field, oxygen vacancies can drift into the interface region, reducing the electronic barrier and resulting in a low-resistance state. Under an electric field with the opposite polarity, the oxygen vacancies are repelled away from the interface region, recovering the electronic barrier to regain the high resistance state [6,21,22]. A family of nanodevices with different switching and currentvoltage (I -V ) characteristics has been demonstrated by manipulating the elemental composition at the two interfaces of a simple metal/oxide/metal device stack [23]. For a crossbar array of memristors in a storage/memory circuit, sneak path currents [24] can be minimized by using memristors with a rectifying I -V characteristic, especially when they are in the low-resistance state. Therefore, interface engineering is critical to obtain the desired switching behavior and electrical properties for memristive devices.From a semiconductor physics point of view, the work function of the electrode metal might be an important factor in determining the electronic barrier at the metal/oxide interface [25]. This barrier in our thin film devices is not a traditional Schottky barrier because the oxide film is amorphous with a large concentration of defects and likely thinner than the depletion region of the semiconducting oxide. We prepared a set of 5 µm × 5 µm cross-point devices with six different top electrode metals (Au, Pt, Ag, Ni, W and Ti) to examine the effect of these contacts on the I -V characteristics, as show...

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Resistive switching memory effect of ZrO2 films with Zr+ implanted

Cited by 251 publications

References 15 publications

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Metal/TiO2 interfaces for memristive switches

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