Response of Switching Hole Traps in the Small-Area P-MOSFET Under Channel Hot-Hole Effect

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {V G, V D} Bias Space: Implications and Peculiarities

“…However, they have revealed interesting new details and have concluded that an independent description of the degradation mechanisms leads to incorrect extrapolations. In recent publications [1]- [3] it has been shown that the charging dynamics of individual oxide defects can significantly This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/ change depending on their spatial position and the applied drain bias.…”

Oxide-defects driven study on reliability and synaptic response characterization of logic devices

“…To-date, studies have only reported the effect of gate voltage stress on oxide traps, while the effect of drain voltage stress is equally important but is seldom studied. Although a finite drain voltage (Vd) may lessen the BTI effect near the drain side of the channel due to a decrease in the effective oxide field, severe BTI degradation could still occur in the rest of the channel, especially at a high gate voltage (Vg) and temperature, and this has motivated several studies on combined BTI/CHC stressing [113], [128][129][130][131]. In contrast to the expected lessening of HCI degradation at high temperature, a past study observed worsening HCI degradation with increase in temperature in high-k gated n-MOSFETs stressed at Vg~Vd and ascribed the observation to PBTI's positive temperature dependence.…”

“…After the exchange, Y2's SR became activation which is about −0.9 V. Thus, these observations imply that Y2's SR variation is a result of the reduction in oxide field near the drain as |Vd| is increased. The reduced oxide field lowers the probability that Y2 is charged during the capture interval [131].…”