Reverse bias stress test of GaN HEMTs for high-voltage switching applications

Dammann, M.; Czap, Heiko; Rüster, J.; Baeumler, M.; Gütle, Frank; Waltereit, Patrick; Benkhelifa, F.; Reiner, Richard; Cäsar, Markus; Konstanzer, Helmer; Müller, Stefan; Quay, R.; Mikulla, M.; Ambacher, O.

doi:10.1109/iirw.2012.6468930

Cited by 4 publications

(4 citation statements)

References 6 publications

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“…The same effect was found to be present also in commercial devices, increasing during long-term reliability tests [26]. In commercial devices, the presence of air bridges prevents the collection of electroluminescence from the topside, but it can be collected from the backside, providing information on the presence and/or creation of defects and leakage paths that may be related to the performance variation [27].…”

Section: On-resistance Increasesupporting

confidence: 52%

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Santi

Meneghini

Meneghesso

et al. 2018

IET Power Electronics

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GaN-based transistors are promising devices for power switching applications, but their unique properties require careful design of the circuit in order to achieve the best performance and reliability. The first part will focus on the characterisation of deep-level effects in enhancement-and depletion-mode HEMTs, which limit the performance of the transistor. Threshold voltage instabilities in MIS-HEMT structures, caused by charge trapping under the gate, and their dependence on SiN acting as the gate dielectric will be reviewed. ON-resistance increase, caused by charge trapping in the gate-drain access region, will then be discussed in normally off gate injection transistors, as well as the effect of the switching frequency on the trapping-de-trapping equilibrium condition. The second part of the paper will discuss possible failure modes related to operating conditions, starting with the oxidation of the surface and the inverse piezoelectric effect at high gate-drain voltage. To have a complete picture of high-field effects, the gate dielectric and passivation robustness will be investigated. Time-dependent degradation will then be analysed in both gate reverse and forward-bias conditions. Finally, failures related to off-state stress and to power dissipation and electric field during an ESD event in AlGaN/GaN-HEMTs will be discussed.

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Section: On-resistance Increasesupporting

confidence: 52%

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Santi

Meneghini

Meneghesso

et al. 2018

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…On the one hand, the capability of GaN-HEMTs to work at high operation temperatures reduces the effort for cooling. On the other hand, the device performance and reliability suffer at high temperatures [4]. A monitoring of the precise in-chip temperature enables an optimum control of the operation adapted to the matters of the application.…”

Section: Introductionmentioning

confidence: 99%

Linear temperature sensors in high-voltage GaN-HEMT power devices

Reiner

Waltereit

Weiss

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This work presents a high-voltage GaN-based power HEMT with a highly-linear, monolithically-integrated temperature sensor. The principle is shown and compared to other concepts. The sensor is fabricated by using a interconnect metallization without additional process steps. The performance of the sensor as well as of the power device is characterized. The 600 V power device achieves an on-state resistance of RON = 55 mO at a corresponding drain current ID = 30 A and an advanced dynamic performance with a low gate charge of 20 nC

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“…Therewith, GaN permits the reduction in weight, volume, and cost of power electronics systems. Nonetheless, the device performance and reliability suffer from high temperature [17, 18]. A precise in‐chip temperature sensor can be used to control the operation condition adapted to the matters of the application.…”

Section: Introductionmentioning

confidence: 99%

Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

Reiner

Waltereit

Weiss

et al. 2018

IET Power Electronics

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This study presents monolithically integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition slew rates are demonstrated by means of a monolithic power circuit with integrated gate driver. A highly linear temperature sensor is integrated in a GaN-high-electron-mobility transistor (HEMT) power device for the 600 V class and onstate resistance of 53 mΩ. An area-efficient HEMT structure with integrated freewheeling diodes is presented. This structure is applied in a monolithic multilevel converter chip, as well as in a 600 V class half-bridge chip. The multilevel chip is integrated by an advanced printed circuit board embedding technology and tested in inverter operation with a mains voltage output of 120 V RMS. The performance of the half-bridge is demonstrated in a synchronous buck converter operation from 400 to 200 V and with a switching frequency of 3 MHz.

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Reverse bias stress test of GaN HEMTs for high-voltage switching applications

Cited by 4 publications

References 6 publications

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Linear temperature sensors in high-voltage GaN-HEMT power devices

Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology

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