Reverse short channel effect and channel length dependence of boron penetration in PMOSFETs

Subramanian, C.; Hayden, J.D.; Taylor, William J.; Orłowski, M.; McNelly, T.

doi:10.1109/iedm.1995.499229

Cited by 15 publications

(10 citation statements)

References 3 publications

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“…This alters the value of m in (12) and reduces S. In this specific process technology, the subthreshold slope of the proposed method is 71mV/dec which is 16mV lower than that of the conventional minimum channel device. The improved subthreshold slope reduces the off-current by 30% for the same on-current and increases the Ion-to-Ioff by a 2.5X, from 190 to 483 at 0.2V.…”

Section: Subthreshold Swing and Ion-to-ioff Ratiomentioning

confidence: 94%

“…Traditionally, non-uniform HALO doping was used to mitigate this problem by making the depletion widths narrow and hence reducing the DIBL effect. As a byproduct of HALO, a short channel device shows RSCE behavior where the V th decreases as the channel length is increased [11] [12]. In subthreshold circuits, the SCE mechanism is not as strong as in superthreshold circuits.…”

Section: Introductionmentioning

confidence: 99%

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Utilizing reverse short channel effect for optimal subthreshold circuit design

Kim

Eom

Keane

et al. 2006

Proceedings of the 2006 International Symposium on Low Power Electronics and Design - ISLPED '06

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The impact of the Reverse Short Channel Effect (RSCE) on device current is stronger in the subthreshold region due to the reduced Drain-Induced-Barrier-Lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, and better subthreshold swing. Simulation results using ISCAS benchmark circuits show that the critical path delay and power consumption can be improved by up to 10.4% and 34.4%, respectively.

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Section: Subthreshold Swing and Ion-to-ioff Ratiomentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Utilizing reverse short channel effect for optimal subthreshold circuit design

Kim

Eom

Keane

et al. 2006

Proceedings of the 2006 International Symposium on Low Power Electronics and Design - ISLPED '06

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“…Consequently, the degraded I on ‐to‐ I off ratio poses a significant adverse impact on robustness of the circuits. (ii) Some second‐order effects that are imperceptible or inconspicuous in super‐threshold domain are becoming utterly pronounced in sub‐threshold region. The representative ones encompass reverse short‐channel effect (RSCE) [15–17] and inverse narrow width effect (INWE) [18–20]. These two sub‐threshold effects cause non‐proportional relationship between the driven current and the width together with the length of the transistor.…”

Section: Introductionmentioning

confidence: 99%

65 nm sub‐threshold logic standard cell library using quasi‐Schmitt‐trigger design scheme and inverse narrow width effect aware sizing

Wen¹,

Liu²,

Zhang³

et al. 2020

IET Circuits, Devices & Systems

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In this study, the authors propose a sub-threshold standard cell library in which the quintessence is a quasi-Schmitttrigger logic design scheme and the inverse narrow width effect aware sizing method. The techniques can improve the I onto -I off ratio of the logic cells effectively and provide a significant suppression in leakage current, enhancing the robustness of the circuits. Simulation results show that the NAND3 and NOR3 logics with the new techniques achieve 40-60% and 30-50% reductions in leakage power compared with conventional logic circuits, respectively, when the voltage is scaled down to subthreshold region. Again, they also exhibit considerable improvements in process variation immunity and power-delay product.

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“…(1) oxidation (Orlowski et al, 1987), (2) the damage from lightly doped drain (LDD) and source/drain (S/D) implants (Lutze and Venkatesan, 1995), (3) the electrical deactivation of arsenic (Rousseau Downloaded by [Nova Southeastern University] at 23:02 02 January 2015 et al., 1994 and 1997), (4) boron penetration from poly-gate and oxide (Subramanian et al, 1995). There are still other factors such as annealing (Wensheng et al, 2003) and salicide (Lu and Sung, 1989) within front end processes affecting the RSCE.…”

Section: Introductionmentioning

confidence: 99%

On the reverse short‐channel effect and threshold voltage roll‐off controls for 90 nm node MOSFETs

Chen

Lin

et al. 2007

Journal of the Chinese Institute of Engineers

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2007) On the reverse short-channel effect and threshold voltage roll-off controls for 90 nm node MOSFETs, Journal of the Chinese Institute of Engineers, 30:5, 847-853, ABSTRACTIn order to let device designers tune the short channel behavior of MOSFETs, a method is proposed in this work to demonstrate how to use LDD (lightly doped drain) and pocket implants to control RSCE (reverse short channel effect) and threshold voltage (V t ) roll-off. The method is based on the process parameters and silicon data of the 90 nm node technology of UMC (United Microelectronics Corporation). With the help of computers, 17 different process conditions of 8 different gate lengths were simulated using ISE TCAD to collect V t variation data. Four characteristics representing the short channel behaviors of the MOSFETs were designed and extracted from the simulated data. Their empirical equations were also established subsequently. After verification, those mathematical models were demonstrated to help device designers in choosing the most suitable LDD and pocket implant parameters to generate required V t characteristics.

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Reverse short channel effect and channel length dependence of boron penetration in PMOSFETs

Cited by 15 publications

References 3 publications

Utilizing reverse short channel effect for optimal subthreshold circuit design

Utilizing reverse short channel effect for optimal subthreshold circuit design

65 nm sub‐threshold logic standard cell library using quasi‐Schmitt‐trigger design scheme and inverse narrow width effect aware sizing

On the reverse short‐channel effect and threshold voltage roll‐off controls for 90 nm node MOSFETs

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