Review of injection dependent charge carrier lifetime spectroscopy

Abstract

Characterization and identification of recombination active defects in photovoltaic (PV) materials are essential for improving the performance of solar cells, hence, reducing their levelized cost of electricity. Injection dependent lifetime spectroscopy (IDLS) is a sensitive and widely used technique for investigating defects in silicon. With the development of carrier lifetime measurement techniques and analysis methods, IDLS has gained increasing popularity within the PV research community. In this paper, we review IDLS, from measurement techniques and systems, to existing and emerging defect parameterization methods. We also discuss the limitations and potential pitfalls of lifetime spectroscopy analysis and outline the possible approaches for improvement.

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

“…The symmetrical lifetime test structures were used for τ eff measurements in the temperature range from 25°C to 80°C using a WCT‐120TS lifetime tester (from Sinton Instruments) 31 . The Kane–Swanson method 32 is used to extract J 0s from the τ eff curves.…”

On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon

“…PCD measurements were carried out at 45 °C using our advanced lifetime tester . This system allows simultaneous measurements of both PC and photoluminescence (PL) signals in a wide range of temperatures. , To improve the signal-to-noise ratio (SNR), 500 PCD measurements were averaged to generate each PCD graph. Furthermore, the measurement temperature was selected with the consideration of the SNR.…”

A Dynamic Calibration Method for Injection‐Dependent Charge Carrier Lifetime Measurements

“…The carrier lifetime of the sample was then measured with a customized lifetime tester for PL‐based lifetime measurements. [ 5 ] A light‐emitting diode (LED) with a wavelength of 810 nm was used as the excitation source. The photon flux of the LED, Φ G , was calibrated by a silicon photodiode with a known quantum efficiency.…”

“…[ 2,3 ] Injection‐dependent lifetime measurements can also be used for detecting the dominant recombination‐active defects in the material. [ 4,5 ]…”