2006
DOI: 10.1016/j.mseb.2005.08.117
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Review on material properties of IZO thin films useful as epi-n-TCOs in opto-electronic (SIS solar cells, polymeric LEDs) devices

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Cited by 74 publications
(30 citation statements)
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“…1 shows the XRD pattern of the as-deposited and the IZO films annealed at 100-300 • C. All the films were amorphous, as indicated by the broad low-intensity hump at 2Â = 33 • [4]. The XRD results are in agreement with the studies by Ito et al regarding the crystallization temperature of amorphous IZO [11].…”
Section: Resultssupporting
confidence: 86%
See 1 more Smart Citation
“…1 shows the XRD pattern of the as-deposited and the IZO films annealed at 100-300 • C. All the films were amorphous, as indicated by the broad low-intensity hump at 2Â = 33 • [4]. The XRD results are in agreement with the studies by Ito et al regarding the crystallization temperature of amorphous IZO [11].…”
Section: Resultssupporting
confidence: 86%
“…The electrical conductivity, transparency, thermal stability, durability, etchability and resistance to hydrogen plasma make this material suitable for a wide range of device applications [1][2][3][4][5]. IZO is preferred because of its superior work function, higher transmittance and higher etching rate [6].…”
Section: Introductionmentioning
confidence: 99%
“…[24] Polythiophenes also have modest charge carrier mobility (%0.1 cm 2 Á V À1 Á s) when compared to their inorganic competitors (100-1 000 cm 2 Á V À1 Á s). [25] In recent years, polyselenophenes have been developed in the search for polymers with improved properties, which now begins to meld the inorganic and organic worlds. The lower ionization potential of selenium leads to a polymer that has a lower band-gap (1.6 eV) than polythiophene.…”
Section: Introductionmentioning
confidence: 99%
“…Further, it is one of the II-VI semiconductor materials and hexagonal wurtzite crystal structure. Therefore, it has many applications in different fields (Ramamoorthy et al 2016;Shinde et al 2008;Chava and Kang 2017;Sugumaran et al 2016;Poloju and Reddy 2013;Zubkins et al 2013) to improve the electrical and optical properties of ZnO nanoparticles doped with different metals such as Al, Mg, Cd, In, and Sn by changing the band gap (Khashan and Mahdi 2017;Kumar et al 2015;Bargougui et al 2014;Yan et al 2016). Presently, various methods are being used for synthesis of indiumdoped zinc oxide nanostructures such as chemical vapor deposition (Sharma and Jeevanandam 2014), chemical method (Khashan 2013;Ritala et al 1996), thermal evaporation (Poloju and Reddy 2013), sol-gel (Zubkins et al 2013), atomic layer epitaxy (Naghavi et al 2000), pulsed laser deposition (Umer et al 2012), spray pyrolysis (Shinde et al 2008) and wire explosion (Hamad et al 2016).…”
Section: Introductionmentioning
confidence: 99%